AON6970

Overview

The AON6970 is a dual asymmetric N-Channel AlphaMOS power transistor in a DFN5X6D package. It integrates Q1 and Q2 with distinct electrical profiles for optimized switching performance. Q1 features a maximum drain-source voltage (VDS) of 30V, continuous drain current (ID) of 58A at VGS=10V, and on-resistance (RDS(ON)) below 5.4mΩ at VGS=10V or 8.5mΩ at VGS=4.5V. Q2 provides higher current capability with an ID of 85A and RDS(ON) below 1.5mΩ at VGS=10V or 2.3mΩ at VGS=4.5V. The device includes an integrated Schottky diode on Q2 (SRFET), exhibits low gate charge, and supports 100% UIS testing.

Feature Summary

• Dual asymmetric configuration combining a standard N-Channel MOSFET with a Soft Recovery FET (SRFET) featuring an integrated Schottky diode.
• Utilizes latest Trench Power AlphaMOS technology to achieve very low on-resistance at both 10V and 4.5V gate drive voltages.
• Designed for high current capability and low gate charge to enhance switching efficiency in power conversion applications.

Applications

• DC/DC converters in computing and server infrastructure.
• Point-of-load (POL) regulation circuits.
• Isolated DC/DC converters in telecommunications and industrial systems.

Procurement Notes

Verify the specific component revision and manufacturing date code against the original equipment manufacturer's documentation before integration. Confirm that the DFN5X6D package thermal characteristics align with the target printed circuit board design, as junction-to-ambient resistance is highly dependent on copper area and airflow conditions specified in the datasheet.

Selection Notes

Select this component when a compact dual-MOSFET solution is required for asymmetric half-bridge or synchronous rectifier topologies. The inclusion of the SRFET with an integrated Schottky diode on Q2 reduces external component count and reverse recovery losses. Ensure the driving circuit can support the required gate voltage levels to utilize the low RDS(ON) specifications effectively.

Part Context

The AON6970 belongs to the AlphaMOS product line from Alpha & Omega Semiconductor, focusing on low-voltage power management. It is designed to replace discrete dual MOSFET arrangements, saving board space. The asymmetric nature allows designers to optimize for either fast switching or high current handling within a single package footprint.

Replacement Considerations

Direct pin-compatible replacements should be verified against the DFN5X6D footprint and electrical limits. Potential substitutes must match the 30V rating and provide comparable RDS(ON) values for both channels to maintain thermal and efficiency performance in the existing design.

FAQ

What is the difference between Q1 and Q2 in the AON6970?

Q1 is a standard N-Channel MOSFET rated for 58A continuous current with an RDS(ON) below 5.4mΩ. Q2 is an SRFET (Soft Recovery FET) with an integrated Schottky diode, rated for higher current at 85A and lower on-resistance below 1.5mΩ.

Does the AON6970 include a body diode?

Yes, Q2 features an integrated Schottky diode as part of its SRFET structure, which improves reverse recovery characteristics compared to a standard body diode.

What is the maximum junction temperature for the AON6970?

The maximum junction temperature (TJ) and storage temperature range for the AON6970 is -55°C to 150°C.