AON6996

Overview

The AON6996 is a dual asymmetric N-channel MOSFET manufactured by Alpha & Omega Semiconductor Inc. utilizing Trench Power αMOS technology. It features a 30V drain-source voltage rating and operates within a junction temperature range of -55°C to 150°C. The device integrates two distinct FETs in an 8-DFN(5x6) package. Q1 provides a continuous drain current of 50A with a maximum on-resistance of 5.2mΩ at VGS=10V. Q2, designated as SRFET™, delivers 60A with a lower on-resistance of 3.9mΩ at VGS=10V. Both channels are rated for logic-level gate drive voltages.

Feature Summary

• Asymmetric dual configuration integrating standard and soft recovery FETs
• Trench Power αMOS technology for low on-resistance and high current capability
• Integrated Schottky diode functionality on the soft recovery channel
• Validated reliability through 100% UIS and Rg testing

Applications

• DC/DC converters in computing systems
• Isolated DC/DC converters in telecom infrastructure
• Industrial isolated power supply designs

Procurement Notes

Verify component authenticity against official manufacturer documentation prior to integration. Confirm that the specific ordering suffix matches the required tape and reel format. Ensure compliance with RoHS and Halogen-Free standards as specified in the datasheet. Validate thermal management requirements based on the provided junction-to-case resistance values.

Selection Notes

Select this component when designing circuits requiring asymmetric current handling or specialized body-diode characteristics. The integrated SRFET™ channel offers reduced reverse recovery charge compared to standard configurations. Evaluate thermal dissipation limits carefully, as the maximum power dissipation is constrained by the compact DFN package dimensions and ambient conditions.

Part Context

This part belongs to the AON699 series of dual asymmetric MOSFETs from Alpha & Omega Semiconductor. It is designed specifically for applications demanding efficient power conversion with minimized switching losses. The inclusion of a soft recovery FET allows for improved performance in synchronous rectification topologies where body diode conduction occurs frequently.

Replacement Considerations

Direct replacements must match the 30V rating, 8-DFN(5x6) footprint, and asymmetric current specifications. Verify that substitute components offer comparable gate threshold voltages and total gate charge to maintain switching speed compatibility.