Single FETs, MOSFETs AON7424 product image

AON7424

$0.26
  • Description:MOSFET N-CH 30V 18A/40A 8DFN
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)

SKU:b9d82527b48b Category: Brand:

  
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AON7424 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 30V 18A/40A 8DFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AON7424

  • Description:MOSFET N-CH 30V 18A/40A 8DFN
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:18A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:5.2mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:3450 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):3.1W (Ta), 36W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-DFN-EP (3x3)
  • Package / Case:8-PowerVDFN

Single FETs, MOSFETs datasheet and documents for AON7424

AON7424

Single FETs, MOSFETs Overview

The AON7424 is an N-channel power MOSFET manufactured by Alpha & Omega Semiconductor Inc. It features a drain-source voltage (Vds) of 30 V and a continuous drain current (Id) of 18 A at ambient temperature, extending to 40 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 3.2 mΩ at 10 V gate drive. Key electrical parameters include a gate charge (Qg) of 60 nC at 10 V and an input capacitance (Ciss) of 3450 pF at 15 V. Thermal dissipation capabilities are rated at 3.1 W at ambient temperature and 36 W at case temperature. The component operates within a junction temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

  • Optimized for high-efficiency power conversion applications through low on-resistance characteristics.
  • Designed with enhanced thermal performance to support high current densities in compact packages.

Single FETs, MOSFETs Applications

  • High-efficiency power conversion circuits
  • DC-DC converter modules
  • Power management integrated circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging configuration. Confirm RoHS compliance status and moisture sensitivity level requirements prior to integration into production workflows. Cross-reference the part number with the latest product change notices to verify active manufacturing status and any recent parameter updates.

Single FETs, MOSFETs Selection Notes

Select this component when a 30 V N-channel MOSFET with high current capability is required. The 8-DFN-EP package provides a balance between thermal dissipation and board space efficiency. Ensure the driving circuit can supply sufficient gate charge to achieve the specified low on-resistance during switching transitions.

Single FETs, MOSFETs Part Context

This device belongs to the AlphaMOS series from Alpha & Omega Semiconductor Inc., focusing on power management solutions. It utilizes advanced trench technology to minimize conduction losses while maintaining robust switching performance suitable for modern electronic systems requiring efficient power handling.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 30 V rating, N-channel configuration, and 8-DFN-EP(3x3) package. Verify that alternative parts meet or exceed the 40 A case current and 3.2 mΩ on-resistance specifications to maintain system performance integrity.

Single FETs, MOSFETs FAQ

What is the maximum continuous drain current at case temperature?

The maximum continuous drain current is 40 A when measured at case temperature.

What is the gate charge specification at 10 V?

The maximum gate charge is 60 nC when tested at a gate-to-source voltage of 10 V.

AON7424AON7424
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