AON7758

Single FETs, MOSFETs Overview

The AON7758 is an N-channel enhancement mode MOSFET manufactured by Alpha & Omega Semiconductor Inc. It features a drain-source voltage (Vds) of 30 V and a continuous drain current (Id) of 36 A at ambient temperature or 75 A at case temperature. The device utilizes an 8-DFN-EP package with dimensions of 3.3x3.3 mm, offering a power dissipation rating of 4.2 W at ambient temperature and 34 W at case temperature. Key electrical characteristics include a maximum gate charge (Qg) of 19 nC at 10 V and a maximum input capacitance (Ciss) of 5200 pF at 15 V.

Single FETs, MOSFETs Feature Summary

• High current handling capability with dual ratings for ambient and case temperatures
• Low gate charge for efficient switching performance
• Compact surface-mount footprint suitable for space-constrained designs

Single FETs, MOSFETs Applications

• Power management circuits requiring low voltage operation
• DC-DC converter output stages
• Load switch applications in portable electronics

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to ensure the correct tape and reel quantity matches your assembly requirements. Confirm that the component status remains active as distribution availability may vary. Ensure the selected variant meets RoHS compliance standards if required by your manufacturing process. Cross-reference the datasheet revision date to confirm technical specifications have not changed.

Single FETs, MOSFETs Selection Notes

Select this component when a 30 V N-channel MOSFET with high pulsed current capacity is required. The 8-DFN-EP package provides thermal efficiency through an exposed pad. Consider the trade-off between the higher input capacitance and the high current density for your specific switching frequency needs. Ensure adequate heatsinking is planned if operating near the case temperature limits.

Single FETs, MOSFETs Part Context

This part belongs to the AlphaMOS series from Alpha & Omega Semiconductor Inc., focusing on low-voltage power switching solutions. The 8-DFN-EP package is commonly used in modern consumer electronics and industrial control boards where board space is limited but thermal performance remains critical for reliable operation under load.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 30 V rating, N-channel configuration, and 8-DFN-EP(3.3x3.3) package. Verify that alternative parts meet or exceed the 36 A/75 A current ratings and similar gate charge specifications to maintain circuit performance without redesign.