AON7764

$0.57

Description：MOSFET N-CH 30V 30A/32A 8DFN
Series：AlphaMOS
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:4b485f15c335 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

AON7764 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 30V 30A/32A 8DFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AON7764

Description：MOSFET N-CH 30V 30A/32A 8DFN
Series：AlphaMOS
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：30A (Ta), 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：3.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：40 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1990 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：4.2W (Ta), 30W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-DFN-EP (3x3)
Package / Case：8-PowerVDFN

Single FETs, MOSFETs datasheet and documents for AON7764

AON7764

Single FETs, MOSFETs Overview

The AON7764 is an N-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor Inc. It features a drain-source voltage rating of 30 V and supports continuous drain currents of 30 A at ambient temperature and 32 A at case temperature. The device exhibits a maximum on-resistance of 3.2 milliohms when driven at 10 V with a 20 A load. Gate threshold voltage is specified at a maximum of 2.2 V under a 250 µA condition, while the gate charge reaches 40 nC at 10 V. Input capacitance measures up to 1990 pF at 15 V. Power dissipation capabilities are rated at 4.2 W in free air and 30 W at the case. The component operates within a junction temperature range of -55°C to 150°C and utilizes an 8-DFN-EP package.

Single FETs, MOSFETs Feature Summary

N-channel MOSFET construction for efficient switching applications
Low on-resistance characteristics optimized for high-current performance
Robust thermal dissipation capability through exposed pad design
High current handling capacity suitable for power management circuits

Single FETs, MOSFETs Applications

DC-DC converter output stages
Power distribution networks
Load switch implementations

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized channels due to discontinued status. Confirm package integrity and pin alignment against datasheet specifications. Validate lot codes and traceability documentation prior to integration. Ensure storage conditions comply with moisture sensitivity level requirements to prevent soldering defects during assembly processes.

Single FETs, MOSFETs Selection Notes

Evaluate thermal resistance parameters relative to system heat dissipation constraints. Compare on-resistance values against competing devices for efficiency optimization. Assess gate charge requirements against driver capabilities to ensure adequate switching speeds. Verify voltage ratings exceed peak circuit transients to maintain reliability margins.

Single FETs, MOSFETs Part Context

This component belongs to the AlphaMOS series from Alpha & Omega Semiconductor Inc., designed for general-purpose power switching. It represents a discrete semiconductor solution within the broader portfolio of metal oxide semiconductor field effect transistors. The part is categorized under single FETs and is intended for surface mount technology integration in compact electronic designs.