AON7804_101

AON7804_101

  • Description:MOSFET 2N-CH 30V 9A 8DFN
  • Series:-

SKU:53150527f60d Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET 2N-CH 30V 9A 8DFN
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:9A (Ta), 22A (Tc)
  • Rds On (Max) @ Id, Vgs:21mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id:2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:888pF @ 15V
  • Power - Max:3.1W (Ta), 17W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerSMD, Flat Leads
  • Supplier Device Package:8-DFN (3x3)
  • Grade:-
  • Qualification:-

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AON7804_101

Overview

The AON7804 is a dual N-channel MOSFET array housed in an 8-lead DFN3x3 package. It features a drain-source voltage of 30V and a continuous drain current of 22A at VGS=10V. The on-resistance is less than 21mΩ at VGS=10V and less than 26mΩ at VGS=4.5V. Maximum junction-to-case thermal resistance is 7.5°C/W, while junction-to-ambient is 75°C/W. Power dissipation reaches 17W at TA=25°C and 2W at TA=70°C. Gate threshold voltage ranges from 1.2V to 2.4V. Total gate charge is 18nC max at VGS=10V. Operating temperature spans -55°C to 150°C.

Feature Summary

  • Dual configuration integrates two low RDS(ON) N-channel MOSFETs within a compact footprint for space-constrained designs.
  • Optimized layout facilitates high-efficiency synchronous buck power stages with minimal board area usage.
  • Manufacturing includes 100% UIS testing and gate resistance verification to ensure device reliability.

Applications

  • Compact DC/DC converter applications
  • Synchronous buck power stages

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact packaging and tape-and-reel specifications. Ensure the component version matches the required revision level for your design. Confirm that the consumer market qualification aligns with your application requirements before finalizing procurement.

Selection Notes

Select this component for applications requiring dual N-channel switching in a small surface-mount package. Evaluate the 21mΩ on-resistance at VGS=10V for efficiency needs. Consider the 7.5°C/W junction-to-case thermal resistance for heatsinking strategies. Verify that the 30V breakdown voltage meets the circuit's maximum operating conditions.

Part Context

This part belongs to Alpha & Omega Semiconductor's portfolio of dual MOSFET arrays designed for consumer electronics. The DFN3x3 package provides a compact solution compared to traditional leaded packages. It serves as a monolithic alternative to discrete single FET pairs, reducing assembly complexity and PCB real estate.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided source material.

FAQ

What is the maximum pulsed drain current?

The maximum pulsed drain current is 48A.

Is the device tested for unclamped inductive switching?

Yes, the datasheet specifies that the device undergoes 100% UIS testing.

What is the typical body diode reverse recovery time?

The typical body diode reverse recovery time is 6ns.

AON7804_101AON7804_101

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