AON7810

Overview

The AON7810 is a dual N-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench MOSFET technology to deliver high performance in surface-mount applications. The device features a drain-source voltage rating of 100V and a continuous drain current of 6.5A at 25°C case temperature. Key electrical parameters include a maximum on-resistance of 35 milliohms measured at a gate-source voltage of 10V with a drain current of 4A. The component is housed in an 8-DFN package measuring 5x6mm, designed for efficient thermal dissipation and compact circuit board layouts.

Feature Summary

• Dual configuration integrates two independent N-channel MOSFETs within a single compact package to reduce footprint.
• Advanced trench technology ensures low conduction losses and optimized switching characteristics.
• Logic-level gate drive capability allows direct interfacing with standard control signals.

Applications

• Synchronous rectification in DC-DC converter circuits
• High-side and low-side load switching applications
• Motor driver output stages

Procurement Notes

Verify the specific ordering suffix against the manufacturer datasheet to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status and moisture sensitivity level requirements prior to integration into the manufacturing process. Ensure the source document matches the exact part number to avoid substitution errors.

Selection Notes

Select this component when a dual N-channel configuration is required for space-constrained designs. Evaluate the 35 milliohm on-resistance against the target load current to ensure acceptable power dissipation. Verify that the 100V voltage rating provides sufficient margin for the application's peak transient voltages.

Part Context

This component belongs to the AON series of dual MOSFETs from Alpha & Omega Semiconductor. The series focuses on providing complementary or dual solutions for power management ICs and discrete logic interfaces. The 8-DFN packaging aligns with industry standards for dense surface-mount assembly processes.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-reference with other dual N-channel MOSFETs offering similar 100V ratings and DFN-8 packages only after verifying pin compatibility and thermal characteristics.