AON7812

Description：MOSFET 2N-CH 30V 6A 8DFN
Series：-

SKU:80a79a53d64e Category: FET, MOSFET Arrays Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 6A 8DFN
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Bulk
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual) Asymmetrical
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：6A
Rds On (Max) @ Id, Vgs：14.5mOhm @ 6A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：600pF @ 15V
Power - Max：4.1W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerSMD, Flat Leads
Supplier Device Package：8-DFN (3x3)
Grade：-
Qualification：-

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AON7812

Overview

The AON7812 is a dual N-channel MOSFET from Alpha & Omega Semiconductor, utilizing Trench Power AlphaMOS technology. It features a drain-source voltage of 30V and continuous drain current ratings of 6A at VGS=10V. The device offers low on-resistance, specified as less than 14.5mΩ at VGS=10V and less than 20.5mΩ at VGS=4.5V. Packaged in a DFN 3x3 EP format with tape and reel form factor, it includes an exposed pad for thermal management. The component is rated for junction temperatures between -55°C and 150°C.

Feature Summary

Dual configuration integrating two independent N-channel MOSFETs within a single compact package to reduce board space.
Trench Power AlphaMOS technology provides enhanced performance through minimized on-resistance and reduced gate charge.
Robust reliability ensured by 100% testing for Unclamped Inductive Switching (UIS) capability and gate resistance verification.

Applications

DC/DC converters in computing and server power architectures
Point-of-load (POL) regulation circuits
Isolated DC/DC converters in telecommunications and industrial systems

Procurement Notes

Verify the specific ordering suffix and package variant when sourcing components. Confirm that the manufacturer's datasheet revision matches the required specifications for your design. Ensure compliance with RoHS and halogen-free standards if mandated by your project requirements. Cross-reference the part number with authorized distributors to confirm availability and authenticity before finalizing procurement plans.

Selection Notes

Select this component for applications requiring dual N-channel switching with low conduction losses. The 30V rating suits low-voltage power distribution networks. Consider the DFN 3x3 EP package for its thermal efficiency and small footprint. Evaluate the gate charge characteristics against your driver capabilities to optimize switching speeds and minimize power dissipation during transitions.

Part Context

The AON7812 belongs to the AlphaMOS product line, specifically designed for low-voltage power applications. It represents a dual-channel solution intended to replace discrete single MOSFETs, thereby simplifying circuit layout and improving thermal performance through shared heat dissipation paths via the exposed pad.