AON7826

Overview

The AON7826 is a dual N-channel silicon MOSFET manufactured by Alpha & Omega Semiconductor Inc. It features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 9A at 25°C. The device is housed in an 8-DFN package with dimensions of 3x3mm, offering a power dissipation rating of 2.8W at ambient temperature. Key electrical parameters include a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 2.5V at 250µA. The input capacitance (Ciss) is 426 pF at 30V, and the total gate charge (Qg) is 12 nC at 10V. The component operates within a junction temperature range of -55°C to 150°C.

Feature Summary

• Dual N-channel configuration for space-efficient circuit design
• Logic-level gate drive capability for direct microcontroller interfacing
• Low on-resistance characteristics for improved power efficiency
• Exposed pad thermal enhancement for effective heat dissipation

Applications

• DC-DC converter synchronous rectification
• Motor control driver circuits
• Power management modules
• Battery protection switches

Procurement Notes

Verify the specific suffix or tape-and-reel quantity against the manufacturer's official ordering guide, as packaging variations may exist. Confirm RoHS compliance status and lead times directly with authorized distributors prior to procurement. Ensure that the 8-DFN footprint matches the PCB layout requirements, paying attention to the exposed thermal pad soldering specifications for reliable operation.

Selection Notes

Select this component when a compact dual-N-channel solution is required for low-voltage applications up to 20V. Consider the 9A current rating and 2.8W power dissipation limits relative to the thermal environment. Evaluate the 44mΩ on-resistance at 10V Vgs for conduction loss calculations. Ensure the 8-DFN package size fits within the available board area constraints compared to larger packages like SOIC-8.

Part Context

The AON7826 belongs to the Alpha & Omega Semiconductor dual MOSFET family, designed for high-density power applications. It utilizes advanced silicon technology to achieve low Rds(on) within a small footprint. This series is commonly used in portable electronics and industrial systems where space savings and thermal performance are critical design factors.

Replacement Considerations

Public confirmed substitute part numbers: None identified in provided documentation.