AOND32324

$1.23

Description：MOSFET N/P-CH 30V 13A 8DFN
Series：-

SKU:ff7cd68d51a3 Category: FET, MOSFET Arrays Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 30V 13A 8DFN
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：13A (Ta), 16A (Tc), 15A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs：14mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：760pF @ 15V, 1995pF @ 15V
Power - Max：3.5W (Ta), 12.5W (Tc), 4.1W (Ta), 30W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerSMD, Flat Leads
Supplier Device Package：8-DFN (5x6)
Grade：-
Qualification：-

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AOND32324

Overview

The AOND32324 is a dual complementary MOSFET from Alpha & Omega Semiconductor, integrating an N-channel and P-channel device in a single DFN5x6 EP2 package. The N-channel transistor (Q1) supports a drain-source voltage of 30V and continuous current of 16A at VGS=10V, with on-resistance under 14mΩ. The P-channel transistor (Q2) provides -30V breakdown and -16A current capability, featuring on-resistance below 12mΩ at VGS=-10V. Both channels are optimized for low gate charge and excellent thermal performance, rated for junction temperatures up to 150°C.

Feature Summary

Dual complementary configuration combining N-channel and P-channel MOSFETs
Advanced trench power MOSFET technology for low on-resistance
Low gate charge characteristics for efficient switching
Excellent thermal performance with exposed pad design

Applications

Motor Drive
DC-FAN
Pch+Nch Complementary MOSFET circuits

Procurement Notes

Verify the specific orderable part number against the manufacturer's official documentation before procurement. Confirm that the component meets RoHS and Halogen-Free compliance requirements as stated in the datasheet. Ensure the selected package form matches the Tape & Reel specification provided by Alpha & Omega Semiconductor.

Selection Notes

Select this component for applications requiring matched N-channel and P-channel pairs in a compact footprint. Evaluate thermal resistance values based on the specific PCB copper area and airflow conditions. Verify that the gate drive voltage levels align with the specified thresholds for optimal RDS(ON) performance.

Part Context

This component belongs to the Alpha & Omega Semiconductor lineup of dual complementary MOSFETs. It utilizes trench power MOSFET technology to achieve high current density and low conduction losses within a small surface-mount package suitable for modern electronic designs.