SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
AONR32318 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is N. Review the specifications below when checking this part for your BOM.
The AONR32318 is a 30V N-Channel Power MOSFET utilizing Trench technology. It features a maximum drain-source voltage of 30V and continuous drain current ratings of 50A at 25°C case temperature and 41A at 70°C ambient temperature. The device offers low on-resistance, specified as less than 2.2mΩ at VGS=10V and less than 3.1mΩ at VGS=4.5V. It is housed in a DFN 3.3x3.3 EP package with an exposed pad for thermal management.
Verify the specific ordering suffix to confirm the tape and reel packaging format. Confirm compliance with RoHS and Halogen-Free standards against the latest datasheet revision. Ensure the selected component matches the required DFN 3.3x3.3 EP package dimensions for proper PCB footprint integration.
Select this component for applications requiring low RDS(ON) at both 10V and 4.5V gate drive voltages. Consider the thermal resistance characteristics when designing heat dissipation paths. Verify that the 30V breakdown voltage aligns with the system's operating voltage requirements.
This part belongs to Alpha & Omega Semiconductor's portfolio of N-Channel MOSFETs designed for power switching. It utilizes Trench Power MOSFET technology to achieve high performance in a compact surface-mount package suitable for portable electronics and power management circuits.
No public confirmed substitute part numbers are available in the provided documentation.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.