AONR36326C

$0.12

Description：MOSFET N-CH 30V 12A/12A 8DFN
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)

SKU:f59a01941879 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

AONR36326C is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 30V 12A/12A 8DFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AONR36326C

Description：MOSFET N-CH 30V 12A/12A 8DFN
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：12A (Ta), 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：9.8mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：15 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：540 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：3.1W (Ta), 20.5W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-DFN-EP (3x3)
Package / Case：8-PowerVDFN

Single FETs, MOSFETs datasheet and documents for AONR36326C

AONR36326C

Single FETs, MOSFETs Overview

The AONR36326C is a surface-mount N-channel Power MOSFET manufactured by Alpha & Omega Semiconductor. It features a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 12 A at both ambient and case temperatures. The device exhibits a maximum on-resistance (Rds(on)) of 9.8 mΩ at 12 A with a gate drive of 10 V. Key electrical characteristics include a maximum gate charge (Qg) of 15 nC at 10 V, an input capacitance (Ciss) of 540 pF at 15 V, and a threshold voltage (Vgs(th)) of 2.3 V max at 250 µA. Power dissipation ratings are 3.1 W in free air (Ta) and 20.5 W at the case (Tc). The component operates within a junction temperature range of -55°C to 150°C and is housed in an 8-DFN-EP(3x3) package.

Single FETs, MOSFETs Feature Summary

Low gate charge for efficient switching performance
Enhanced thermal dissipation via exposed pad design
High current handling capability in compact footprint

Single FETs, MOSFETs Applications

DC-DC converter output stages
Load switch applications
Power management integrated circuits (PMICs)

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to ensure correct packaging configuration, such as tape and reel quantities. Confirm RoHS compliance status and material composition declarations prior to integration. Check for any recent product change notifications regarding pinout or thermal characteristics. Ensure the supplier provides valid traceability documentation for quality assurance purposes.

Single FETs, MOSFETs Selection Notes

Select this component when a 30 V rating and 12 A continuous current capacity are required in a small form factor. The low gate charge makes it suitable for high-frequency switching applications where driver efficiency is critical. Consider the thermal resistance and power dissipation limits relative to the PCB copper area available for heat sinking.

Single FETs, MOSFETs Part Context

This part belongs to the AONR363 series of N-channel MOSFETs from Alpha & Omega Semiconductor. The series focuses on providing high-performance solutions for portable and battery-powered devices. The 8-DFN-EP package offers superior thermal performance compared to standard DFN packages, facilitating higher power density in space-constrained designs.