Single FETs, MOSFETs AONR36329 product image

AONR36329

$0.09
  • Description:LINEAR IC
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)

SKU:c29ed2d58c38 Category: Brand:

  
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AONR36329 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is LINEAR IC. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AONR36329

  • Description:LINEAR IC
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:13.6A (Ta), 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:10.5mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:2.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:18 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:600 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):3.1W (Ta), 20.8W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-DFN-EP (3x3)
  • Package / Case:8-PowerVDFN

Single FETs, MOSFETs datasheet and documents for AONR36329

AONR36329

Single FETs, MOSFETs Overview

The AONR36329 is an N-Channel Power MOSFET manufactured by Alpha & Omega Semiconductor Inc. It features a maximum drain-source voltage (Vdss) of 30 V and continuous drain current ratings of 13.6 A at ambient temperature (Ta) and 20 A at case temperature (Tc). The device utilizes Trench Power MOSFET technology to achieve low on-resistance and gate charge. It is housed in an 8-DFN-EP (3x3 mm) surface-mount package with an exposed pad for thermal management. Maximum power dissipation is rated at 3.1 W at Ta and 20.8 W at Tc, with an operating junction temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

  • Utilizes Trench Power MOSFET technology for enhanced performance
  • Designed for high current capability applications
  • Optimized for low on-resistance and low gate charge

Single FETs, MOSFETs Applications

  • Power management circuits requiring efficient switching
  • DC-DC converter designs
  • Load switch applications

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and manufacturing date code upon procurement. Confirm that the 8-DFN-EP (3x3) footprint matches the target PCB layout, paying close attention to the exposed pad thermal connection requirements. Ensure compliance with RoHS 2.0 and halogen-free standards if required by the final assembly specifications.

Single FETs, MOSFETs Selection Notes

Select this component when a compact N-channel solution with 30 V rating and up to 20 A case current capacity is needed. The 8-DFN-EP package offers a balance between thermal performance and board space efficiency. Consider the 3.1 W ambient power dissipation limit for natural convection designs or utilize the exposed pad for improved heat sinking in higher power scenarios.

Single FETs, MOSFETs Part Context

This part belongs to Alpha & Omega Semiconductor's portfolio of trench MOSFETs designed for general-purpose power switching. The 8-DFN-EP package is commonly used in portable electronics and industrial equipment where space constraints and thermal management are critical design factors.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameters before considering alternative manufacturers.

AONR36329AONR36329
$0.09
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