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AONR36329 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is LINEAR IC. Review the specifications below when checking this part for your BOM.
The AONR36329 is an N-Channel Power MOSFET manufactured by Alpha & Omega Semiconductor Inc. It features a maximum drain-source voltage (Vdss) of 30 V and continuous drain current ratings of 13.6 A at ambient temperature (Ta) and 20 A at case temperature (Tc). The device utilizes Trench Power MOSFET technology to achieve low on-resistance and gate charge. It is housed in an 8-DFN-EP (3x3 mm) surface-mount package with an exposed pad for thermal management. Maximum power dissipation is rated at 3.1 W at Ta and 20.8 W at Tc, with an operating junction temperature range of -55°C to 150°C.
Verify the specific datasheet revision and manufacturing date code upon procurement. Confirm that the 8-DFN-EP (3x3) footprint matches the target PCB layout, paying close attention to the exposed pad thermal connection requirements. Ensure compliance with RoHS 2.0 and halogen-free standards if required by the final assembly specifications.
Select this component when a compact N-channel solution with 30 V rating and up to 20 A case current capacity is needed. The 8-DFN-EP package offers a balance between thermal performance and board space efficiency. Consider the 3.1 W ambient power dissipation limit for natural convection designs or utilize the exposed pad for improved heat sinking in higher power scenarios.
This part belongs to Alpha & Omega Semiconductor's portfolio of trench MOSFETs designed for general-purpose power switching. The 8-DFN-EP package is commonly used in portable electronics and industrial equipment where space constraints and thermal management are critical design factors.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameters before considering alternative manufacturers.
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