AONR62818

$0.39

Description：N
Series：AlphaSGT™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)

SKU:1b3b43d8d122 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

AONR62818 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is N. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AONR62818

Description：N
Series：AlphaSGT™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：18A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：6.6mOhm @ 18A, 10V
Vgs(th) (Max) @ Id：2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：48 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2420 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：4.1W (Ta), 54W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-DFN-EP (3.3x3.3)
Package / Case：8-PowerWDFN

Single FETs, MOSFETs datasheet and documents for AONR62818

AONR62818

Single FETs, MOSFETs Overview

The AONR62818 is an N-Channel AlphaSGT™ Trench Power MOSFET with a Drain-Source Voltage (VDS) of 80V. It features a maximum continuous drain current (ID) of 50A at TC=25°C and a pulsed drain current (IDM) of 175A. The device exhibits low on-resistance, specified as less than 6.6mΩ at VGS=10V and less than 9.5mΩ at VGS=4.5V. Total gate charge (Qg) is 34nC at VGS=10V and 15nC at VGS=4.5V. Thermal resistance from junction to case (RθJC) is 1.8°C/W, while junction-to-ambient (RθJA) is 60°C/W. The component supports a maximum junction temperature of 150°C.

Single FETs, MOSFETs Feature Summary

AlphaSGT™ technology providing best-in-class low RDS(ON) and logic level gate drive capability
100% Unclamped Inductive Switching (UIS) tested for enhanced ruggedness
RoHS and Halogen-Free compliant construction

Single FETs, MOSFETs Applications

Synchronous Rectification
High Frequency DC/DC Converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging configuration. Confirm that the requested part number matches the exact electrical specifications required for the target application circuit. Cross-reference thermal management requirements with the provided junction-to-case and junction-to-ambient resistance values during system design validation.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high efficiency in compact power stages due to its low on-resistance and small DFN 3.3x3.3 package. Ensure the driving circuit can support the logic level gate threshold for optimal performance at lower voltages. Evaluate the thermal dissipation capabilities based on the specific PCB copper area and airflow conditions relative to the stated thermal resistances.

Single FETs, MOSFETs Part Context

This N-Channel MOSFET belongs to the AlphaSGT™ series from Alpha & Omega Semiconductor Inc., designed for high-performance power management solutions. It utilizes trench technology to achieve superior conduction and switching characteristics compared to standard planar devices. The product line targets modern electronics demanding higher power density and improved energy efficiency.