ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
AONR62921 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is 100V N CHAN FET SMD. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for AONR62921
- Description：100V N CHAN FET SMD
- Series：AlphaSGT™
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：13.5A (Ta), 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：10.2mOhm @ 13.5A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：35 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2450 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：4.1W (Ta), 54W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-DFN-EP (3.3x3.3)
- Package / Case：8-PowerWDFN
Single FETs, MOSFETs datasheet and documents for AONR62921
Single FETs, MOSFETs Overview
The AONR62921 is a 100V N-Channel MOSFET utilizing AlphaSGTTM trench power technology. It features a maximum continuous drain current of 50A and a low on-resistance of less than 10.2mΩ at VGS=10V, or 12.6mΩ at VGS=4.5V. The device supports logic level gate drive with a total gate charge of 35nC at 10V. It is housed in a DFN 3.3x3.3 EP package with tape and reel form factor.
Single FETs, MOSFETs Feature Summary
- Utilizes AlphaSGTTM trench power technology for optimized performance
- Supports logic level gate drive for efficient control
- Features low on-resistance to minimize conduction losses
- Includes 100% UIS and Rg testing for reliability
Single FETs, MOSFETs Applications
- Synchronous rectification in power adaptors
Single FETs, MOSFETs Procurement Notes
Verify the specific orderable part number against the manufacturer's official documentation before procurement. Confirm that the required package type and form factor match the project specifications. Ensure compliance with RoHS and halogen-free standards as stated in the product summary. Check for any recent product change notices or design updates.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring a 100V rating with high current handling capabilities up to 50A. Consider the thermal characteristics and package limitations when designing the heat dissipation strategy. Evaluate the gate charge requirements against the driving circuit capabilities to ensure proper switching performance.
Single FETs, MOSFETs Part Context
This N-Channel MOSFET belongs to the family of trench power devices designed for efficiency and reliability. It is intended for use in power conversion circuits where low on-resistance and robust avalanche capability are critical. The DFN package offers a compact solution for surface mount applications.
Single FETs, MOSFETs Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
