AONS21309C

$1.36

Description：MOSFET P-CH 30V 70A 5X6 DFN
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:7e44f467c0ca Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

AONS21309C is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET P-CH 30V 70A 5X6 DFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AONS21309C

Description：MOSFET P-CH 30V 70A 5X6 DFN
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：3.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：200 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：7300 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：125W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-DFN (5x6)
Package / Case：8-PowerSMD, Flat Leads

Single FETs, MOSFETs datasheet and documents for AONS21309C

AONS21309C

Single FETs, MOSFETs Overview

The AONS21309C is a P-channel MOSFET utilizing advanced trench technology, housed in an 8-DFN(5x6) surface-mount package. It features a drain-source voltage of -30V and a continuous drain current of -70A at Tc=25°C. The device offers low on-resistance, specified as less than 3.8mΩ at VGS=-10V and less than 5.7mΩ at VGS=-4.5V. Key electrical parameters include a maximum gate threshold voltage of 2.3V, a total gate charge of 200nC at 10V, and an input capacitance of 7300pF. Thermal characteristics provide a junction-to-case resistance of 1°C/W and a junction-to-ambient resistance of 55°C/W.

Single FETs, MOSFETs Feature Summary

Utilizes latest advanced trench technology for optimized performance
Features low RDS(ON) across standard drive voltages
Supports high current capability with robust thermal design
Includes 100% UIS and Rg testing for reliability

Single FETs, MOSFETs Applications

Notebook AC-in load switch
Battery protection charge/discharge circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to confirm packaging format, such as tape and reel quantities. Confirm RoHS 2.0 compliance status and halogen-free material declarations against the most recent manufacturer documentation. Ensure the component matches the required DFN 5x6 footprint dimensions and pin configuration for PCB integration.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high current handling in compact surface-mount designs. Evaluate the thermal resistance values against the specific board copper area and ambient conditions to ensure junction temperatures remain within limits. Consider the gate charge requirements relative to the driving circuit capabilities for efficient switching.

Single FETs, MOSFETs Part Context

This part belongs to the Alpha & Omega Semiconductor P-channel MOSFET lineup, designed for power management applications. It is manufactured using trench technology to achieve low on-resistance and high current density. The device is intended for use in portable electronics and battery-powered systems where space efficiency and thermal performance are critical.

Single FETs, MOSFETs Replacement Considerations

Check datasheets for alternative P-channel MOSFETs with compatible -30V ratings and similar current capabilities. Verify that substitute components match the 8-DFN(5x6) package outline and pinout to ensure mechanical interchangeability without PCB redesign.