Single FETs, MOSFETs AONS32311 product image

AONS32311

  • Description:N
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)

SKU:d3f1500a8dad Category: Brand:

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AONS32311 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is N. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AONS32311

  • Description:N
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:56A (Ta), 220A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:1.35mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:150 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:6060 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):6.2W (Ta), 119W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-DFN (5x6)
  • Package / Case:8-PowerSMD, Flat Leads

Single FETs, MOSFETs datasheet and documents for AONS32311

AONS32311

Single FETs, MOSFETs Overview

The AONS32311 is an N-Channel Power MOSFET from Alpha & Omega Semiconductor, housed in an 8-DFN (5x6) surface-mount package. It features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 56A at ambient temperature or 220A at case temperature. The device delivers a maximum power dissipation of 6.2W at Ta and 119W at Tc. Key electrical parameters include a gate charge (Qg) of 70nC and a single pulse avalanche energy rating of 45mJ. The junction temperature range extends up to 150°C.

Single FETs, MOSFETs Feature Summary

  • High current handling capability with dual thermal ratings for ambient and case conditions
  • Robust avalanche energy rating for improved ruggedness in inductive switching applications
  • Compact 8-DFN surface-mount footprint designed for efficient PCB space utilization

Single FETs, MOSFETs Applications

  • DC-DC converter modules requiring high current density
  • Power management integrated circuits (PMIC) output stages
  • Battery protection circuits in portable electronic devices

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix code on the ordering part number to confirm tape and reel packaging specifications. Ensure the procurement documentation references the official Alpha & Omega Semiconductor datasheet for the AONS32311 to validate the 8-DFN (5x6) package dimensions and thermal characteristics against your design requirements.

Single FETs, MOSFETs Selection Notes

Select this component when a 30V N-Channel MOSFET is required with significant current capacity in a small outline package. The 8-DFN form factor supports high-power density designs. Evaluate the thermal resistance values provided in the datasheet to ensure adequate heat sinking or copper pour area is implemented on the PCB to maintain junction temperatures within the specified 150°C limit during operation.

Single FETs, MOSFETs Part Context

This device belongs to the AOS N-channel MOSFET family, which focuses on low on-resistance and high efficiency. The AONS32311 specifically targets applications needing robust performance in compact spaces, leveraging Alpha & Omega Semiconductor's planar technology for reliable power switching in consumer and industrial electronics.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other 30V N-Channel MOSFETs in the 8-DFN (5x6) package. Verify that substitute parts match the 56A/220A current ratings and 6.2W/119W power dissipation limits. Ensure pin compatibility and thermal pad configuration are identical to avoid PCB redesign.

AONS32311AONS32311

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