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AONS66612 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 60V 46A/100A 8DFN. Review the specifications below when checking this part for your BOM.
The AONS66612 is a 60V N-Channel AlphaSGT™ Trench Power MOSFET in an 8-DFN(5x6) package. It features a maximum drain-source voltage of 60V and continuous drain current of 46A at Ta=25°C, rising to 100A at Tc=25°C. The on-resistance is less than 1.65mΩ at VGS=10V and 2.5mΩ at VGS=6V. Operating temperature ranges from -55°C to 150°C.
Verify the specific ordering suffix matches the required tape and reel quantity of 3000 units. Confirm RoHS compliance and halogen-free status requirements against project specifications. Ensure the 8-DFN(5x6) surface mount package aligns with the PCB footprint design. Validate thermal management capabilities based on the junction-to-case resistance values provided in the datasheet.
Select this component for high-efficiency synchronous rectification where low conduction losses are critical. The device supports both 6V and 10V gate drive voltages, offering flexibility in driver selection. Consider the thermal derating curves when designing for ambient temperatures above 25°C or case temperatures exceeding 70°C to ensure operation within the safe operating area limits.
This part belongs to the AlphaSGT™ series from Alpha & Omega Semiconductor Inc., designed for power management solutions. It integrates advanced packaging know-how to deliver high-performance discrete semiconductor products. The DFN5x6 form factor allows for compact board layouts suitable for modern industrial and consumer electronics.
No public confirmed substitute part numbers are available in the source material.
The maximum pulsed drain current (IDM) is 268A.
Yes, the datasheet confirms 100% UIS testing.
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