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AONS66811 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is N. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for AONS66811
- Description：N
- Series：AlphaSGT2™
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：41A (Ta), 200A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：2.5mOhm @ 20A, 8V
- Vgs(th) (Max) @ Id：3.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：110 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5750 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：7.5W (Ta), 258W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-DFN (5x6)
- Package / Case：8-PowerSMD, Flat Leads
Single FETs, MOSFETs datasheet and documents for AONS66811
Single FETs, MOSFETs Overview
The AONS66811 is an N-Channel Power MOSFET utilizing AlphaSGT2 technology, housed in a DFN5x6 surface-mount package. It features a drain-source voltage of 80V and a continuous drain current of 41A at 25°C case temperature. The device achieves a maximum on-resistance of 2.5mΩ at VGS=8V and 2.1mΩ at VGS=10V. Thermal resistance from junction to case is 0.41°C/W, with power dissipation rated at 7.5W (TA=25°C) and 258W (TC=25°C). Operating temperatures range from -55°C to 175°C.
Single FETs, MOSFETs Feature Summary
- Employs AlphaSGT2 trench technology for optimized switching performance and low conduction losses.
- Validated for 100% Unclamped Inductive Switching (UIS) capability and gate resistance testing.
- Designed for high thermal efficiency with a maximum junction temperature rating of 175°C.
Single FETs, MOSFETs Applications
- Industrial applications
- Telecom power supplies
- Server power supply systems
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation to confirm package type and reel specifications. Confirm RoHS 2.0 compliance status and halogen-free certification requirements prior to integration. Ensure that PCB layout supports the required thermal dissipation characteristics for the DFN5x6 footprint.
Single FETs, MOSFETs Selection Notes
Select this component when designing circuits requiring robust avalanche energy handling and low RDS(ON) within an 80V system. Evaluate the thermal impedance curves relative to the target heatsinking strategy. Consider the gate charge parameters for driver compatibility in high-frequency switching environments.
Single FETs, MOSFETs Part Context
This part belongs to the AlphaSGT2 series of power MOSFETs manufactured by Alpha & Omega Semiconductor Inc. The series focuses on delivering enhanced performance through advanced trench gate architecture, targeting high-efficiency power conversion needs in compact form factors suitable for modern electronic equipment.
Single FETs, MOSFETs Replacement Considerations
Consult official substitution guides for verified alternatives. Cross-reference pinout configurations and thermal resistance values carefully when evaluating potential replacements to ensure circuit compatibility.
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