AONV110A60

Single FETs, MOSFETs Overview

The AONV110A60 is an N-Channel Enhancement Mode Power MOSFET from Alpha & Omega Semiconductor, part of the aMOS5™ series. It features a 600V drain-source voltage (Vdss) and a maximum on-resistance (Rds(on)) of 110mΩ at Vgs=10V. The device utilizes a compact DFN8x8 package with Kelvin Source configuration, measuring 8mm x 8mm x 0.9mm. Key electrical parameters include a gate charge (Qg) of 78nC max at 10V and an input capacitance (Ciss) of 4010pF max at 100V. It supports continuous current operation up to 38A at Tc and handles power dissipation of 378W at Tc, operating within a junction temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

• Kelvin Source configuration for improved switching performance and reduced noise sensitivity
• Ultra-low profile DFN8x8 package design suitable for space-constrained applications
• Enhanced thermal efficiency through optimized silicon technology

Single FETs, MOSFETs Applications

• High-frequency DC-DC converters
• Synchronous rectification in power supplies
• Motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and moisture sensitivity level (MSL) requirements prior to integration into surface-mount assembly processes. Ensure storage conditions adhere to recommended humidity controls to maintain device integrity before soldering.

Single FETs, MOSFETs Selection Notes

Select this component when a low-profile, high-current solution is required for 600V applications. The Kelvin Source pin is critical for minimizing gate drive loop inductance in high-speed switching environments. Compare Rds(on) and Qg values against alternative packages to balance conduction losses and switching speeds for the specific circuit topology.

Single FETs, MOSFETs Part Context

This device belongs to the aMOS5™ family, which represents Alpha & Omega Semiconductor's advanced trench MOSFET technology. The series focuses on reducing figure-of-merit (FOM) by optimizing the trade-off between on-resistance and gate charge. The DFN8x8 form factor distinguishes it from traditional leaded packages like TO-263, offering superior thermal conductivity per unit area.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the 600V rating, 110mΩ Rds(on), and DFN8x8 footprint. Verify that substitute parts also feature Kelvin Source pins if low-inductance gate driving is required. Check compatibility with existing PCB land patterns and thermal pad dimensions.