AONY36354

$1.36

Description：MOSFET 2N-CH 30V 18.5A 8DFN
Series：-

SKU:acf57cda125f Category: FET, MOSFET Arrays Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 18.5A 8DFN
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual) Asymmetrical
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：18.5A (Ta), 49A (Tc), 27A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs：5.3mOhm @ 20A, 10V, 2.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.1V @ 250µA, 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20nC @ 10V, 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：820pF @ 15V, 1890pF @ 15V
Power - Max：3.1W (Ta), 21W (Tc), 3.1W (Ta), 31.5W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerSMD, Flat Leads
Supplier Device Package：8-DFN (5x6)
Grade：-
Qualification：-

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AONY36354

Overview

The AONY36354 is a dual asymmetric N-channel MOSFET from Alpha & Omega Semiconductor, housed in an 8-DFN (5x6) package. It features Trench Power MOSFET technology with low on-resistance and high current capability. The device includes two channels: Q1 rated for 49A continuous drain current at TC=25°C with RDS(ON) <5.3mΩ at VGS=10V; Q2 rated for 85A continuous drain current at TC=25°C with RDS(ON) <2.6mΩ at VGS=10V. Both channels support a 30V drain-source voltage and are tested for 100% UIS and gate resistance.

Feature Summary

Dual asymmetric configuration with distinct performance ratings for each channel
Trench Power MOSFET technology enabling low on-resistance and fast switching
Comprehensive reliability testing including 100% Unclamped Inductive Switching verification

Applications

DC/DC converters in computing systems
Point-of-load regulation in telecom infrastructure
Point-of-load regulation in industrial applications

Procurement Notes

Verify the specific ordering suffix and tape/reel specifications directly with the manufacturer or authorized distributors before procurement. Confirm that the component meets RoHS and halogen-free compliance requirements as stated in the datasheet. Ensure the selected package variant matches the intended PCB footprint design constraints.

Selection Notes

Select this component for applications requiring asymmetric current handling within a single package. Channel Q1 suits moderate load paths while Q2 handles higher current demands. Evaluate thermal management strategies based on the junction-to-case thermal resistance values provided for steady-state and pulsed operation conditions.

Part Context

This part belongs to the Alpha & Omega Semiconductor lineup of trench power MOSFETs designed for compact, high-density circuit designs. The DFN 5x6D package offers a small form factor suitable for space-constrained layouts. The product line emphasizes low gate charge and high current capability for efficient power conversion.