AONY36356

$1.39

Description：MOSFET 2N-CH 30V 17.5A 8DFN
Series：-

SKU:bf64f78ffc31 Category: FET, MOSFET Arrays Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 17.5A 8DFN
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：17.5A (Ta), 32A (Tc), 24A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs：6.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：920pF @ 15V
Power - Max：2.9W (Ta), 22W (Tc), 3.4W (Ta), 33W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerVDFN
Supplier Device Package：8-DFN (5x6)
Grade：-
Qualification：-

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AONY36356

Overview

The AONY36356 is a 30V dual asymmetric N-channel MOSFET manufactured by Alpha & Omega Semiconductor Inc. utilizing Trench Power MOSFET technology. It features two independent channels in an 8-DFN (5x6) package with exposed pad. Q1 provides a maximum on-resistance of 6.1mΩ at VGS=10V and 9.6mΩ at VGS=4.5V, with a continuous drain current of 32A. Q2 offers lower resistance at 3.8mΩ (10V) and 4.7mΩ (4.5V), supporting 32A continuous current. The device includes 100% UIS and Rg testing, operates within -55°C to 150°C junction temperature, and complies with RoHS standards.

Feature Summary

Asymmetrical dual configuration optimizing distinct drive requirements for each channel
Trench technology enabling low gate charge and high current capability
Comprehensive reliability validation including 100% Unclamped Inductive Switching and Gate Resistance testing

Applications

DC/DC converters in computer systems
Power management circuits requiring asymmetrical switching characteristics

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and tape/reel specifications. Ensure compliance with applicable export control regulations and legal requirements before procurement. Confirm that the component meets RoHS and halogen-free standards as stated in the datasheet.

Selection Notes

Select this component when designing asymmetric power stages where one channel requires significantly lower on-resistance than the other. Evaluate thermal performance using the provided junction-to-case and junction-to-ambient thermal impedance curves. Verify that the gate charge requirements align with the driving circuit capabilities for both 4.5V and 10V logic levels.

Part Context

This part belongs to Alpha & Omega Semiconductor's portfolio of trench power MOSFETs designed for efficient power management. The company specializes in power integrated circuits and discrete semiconductors for computing, telecommunications, and industrial applications. The AONY series focuses on providing optimized solutions for modern power conversion topologies.

Replacement Considerations

Consult the manufacturer's datasheet for similar parts such as the AONP36336 or AONY36352. Verify pinout compatibility and electrical parameters before substitution. Ensure any replacement maintains the required asymmetric characteristics and thermal performance.

FAQ

What is the difference between Q1 and Q2 in the AONY36356?

Q1 has a higher on-resistance (max 6.1mΩ at 10V) compared to Q2 (max 3.8mΩ at 10V). This asymmetry allows designers to use different channels for distinct load requirements within a single package.

Is the AONY36356 tested for unclamped inductive switching?

Yes, the datasheet specifies that every unit undergoes 100% Unclamped Inductive Switching (UIS) testing to ensure reliability under inductive load conditions.