AOP609

AOP609

$0.23
  • Description:MOSFET N/P-CH 60V 8PDIP
  • Series:-

SKU:918de5f55f73 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N/P-CH 60V 8PDIP
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:-
  • Rds On (Max) @ Id, Vgs:60mOhm @ 4.7A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:570pF @ 30V
  • Power - Max:2.5W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:8-DIP (0.300", 7.62mm)
  • Supplier Device Package:8-PDIP
  • Grade:-
  • Qualification:-

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AOP609

Overview

The AOP609 is a complementary enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor Inc. It integrates an n-channel and a p-channel MOSFET in a single PDIP-8 package. The n-channel device features a drain-source voltage of 60V, continuous drain current of 4.7A at 25°C, and maximum on-resistance of 60mΩ at VGS=10V. The p-channel device offers a drain-source voltage of -60V, continuous drain current of -3.5A at 25°C, and maximum on-resistance of 115mΩ at VGS=-10V. Both channels operate within a junction temperature range of -55°C to 150°C.

Feature Summary

  • Complementary N-channel and P-channel MOSFETs integrated in a single component
  • Advanced trench technology for low on-resistance and gate charge
  • High electrostatic discharge protection rating

Applications

  • H-bridge circuits
  • Inverters
  • Motor control applications

Procurement Notes

Verify the specific ordering suffix when purchasing. The standard product is lead-free and meets ROHS specifications. An alternative Green Product option exists with a different suffix but maintains electrical identity. Confirm package type availability matches design requirements before finalizing orders.

Selection Notes

Select this component for designs requiring matched complementary pairs in a compact footprint. Ensure gate drive voltages align with the specified thresholds for optimal on-resistance performance. Consider thermal management strategies as power dissipation ratings depend heavily on board copper area and ambient airflow conditions.

Part Context

This part belongs to Alpha & Omega Semiconductor's portfolio of discrete power devices. It utilizes trench MOSFET technology to achieve high performance in consumer market applications. The manufacturer emphasizes environmental compliance through lead-free manufacturing processes.

Replacement Considerations

No direct public substitute part numbers are documented in the provided datasheet. Designers should evaluate other complementary MOSFET packages if pinout compatibility is critical.

FAQ

Is the AOP609L electrically different from the standard AOP609?

No, the AOP609L is electrically identical to the standard AOP609. The L suffix indicates a Green Product ordering option.

What is the maximum junction temperature for the AOP609?

The maximum junction temperature (TJ) for both the n-channel and p-channel devices is 150°C.

Does the AOP609 support logic level switching?

Yes, the datasheet specifies that the device features logic level gates, allowing operation with lower gate-source voltages such as 4.5V.

AOP609AOP609
$0.23
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