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The AOP609 is a complementary enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor Inc. It integrates an n-channel and a p-channel MOSFET in a single PDIP-8 package. The n-channel device features a drain-source voltage of 60V, continuous drain current of 4.7A at 25°C, and maximum on-resistance of 60mΩ at VGS=10V. The p-channel device offers a drain-source voltage of -60V, continuous drain current of -3.5A at 25°C, and maximum on-resistance of 115mΩ at VGS=-10V. Both channels operate within a junction temperature range of -55°C to 150°C.
Verify the specific ordering suffix when purchasing. The standard product is lead-free and meets ROHS specifications. An alternative Green Product option exists with a different suffix but maintains electrical identity. Confirm package type availability matches design requirements before finalizing orders.
Select this component for designs requiring matched complementary pairs in a compact footprint. Ensure gate drive voltages align with the specified thresholds for optimal on-resistance performance. Consider thermal management strategies as power dissipation ratings depend heavily on board copper area and ambient airflow conditions.
This part belongs to Alpha & Omega Semiconductor's portfolio of discrete power devices. It utilizes trench MOSFET technology to achieve high performance in consumer market applications. The manufacturer emphasizes environmental compliance through lead-free manufacturing processes.
No direct public substitute part numbers are documented in the provided datasheet. Designers should evaluate other complementary MOSFET packages if pinout compatibility is critical.
No, the AOP609L is electrically identical to the standard AOP609. The L suffix indicates a Green Product ordering option.
The maximum junction temperature (TJ) for both the n-channel and p-channel devices is 150°C.
Yes, the datasheet specifies that the device features logic level gates, allowing operation with lower gate-source voltages such as 4.5V.