AOSD21307

Overview

The AOSD21307 is a dual P-channel MOSFET featuring advanced trench technology in an SO-8 package. It provides a drain-source voltage of -30V and continuous drain current ratings of -9A at VGS=-10V and -7A at VGS=-4.5V. The device exhibits low on-resistance, with maximum values of 16mΩ at -10V gate drive and 28mΩ at -4.5V gate drive. Key electrical parameters include a gate threshold voltage range of -1.3V to -2.3V, total gate charge of 51nC at 10V, and input capacitance of 1995pF. Thermal characteristics specify a junction-to-ambient resistance of 90°C/W in still air, supporting operation within a temperature range of -55°C to 150°C.

Feature Summary

• Dual configuration integrating two independent P-channel MOSFETs in a single compact package.
• Validated for unclamped inductive switching (UIS) performance and gate resistance testing.
• Compliant with RoHS standards and halogen-free manufacturing requirements.

Applications

• Notebook AC-in load switching
• Battery protection circuits for charge and discharge management

Procurement Notes

Verify the specific ordering suffix against official Alpha & Omega Semiconductor documentation to confirm packaging format and quantity. Ensure component authenticity through authorized distribution channels. Confirm that the selected variant matches the required thermal and electrical specifications for the intended application environment before finalizing procurement orders.

Selection Notes

Select this component based on the required dual-channel topology and -30V voltage rating. Evaluate the on-resistance requirements at the specific operating gate voltage, as RDS(ON) increases significantly at lower gate drives. Consider the thermal dissipation capabilities relative to the board layout, as junction-to-ambient resistance is highly dependent on copper area and airflow conditions.

Part Context

The AOSD21307 belongs to the AOSP series of power MOSFETs from Alpha & Omega Semiconductor. This series utilizes advanced trench technology to achieve high current capability and low on-resistance. The dual configuration allows for space-efficient designs in portable electronics and battery-powered systems where multiple switching functions are required.

Replacement Considerations

Direct replacements must match the -30V dual P-channel specification and SO-8 package. Verify pinout compatibility and ensure equivalent or superior electrical parameters for RDS(ON), ID, and thermal resistance. Cross-reference with other dual P-channel MOSFETs from Alpha & Omega or other manufacturers if form-factor constraints allow.