AOSD21313C

Overview

The AOSD21313C is a dual P-channel MOSFET manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to achieve low on-resistance and high current capability. The device features a drain-source voltage (VDS) of -30 V and a continuous drain current (ID) of -5.7 A at VGS=-10V. On-resistance is specified as less than 32 mΩ at VGS=-10V and less than 55 mΩ at VGS=-4.5V. It is housed in an SO-8 surface-mount package with a junction temperature range of -55°C to 150°C.

Feature Summary

• Dual P-channel configuration within a single SO-8 package
• Advanced trench technology for low RDS(ON)
• ESD protection included
• 100% UIS and Rg tested

Applications

• Notebook AC-in load switch
• Battery protection charge/discharge circuits

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to ensure correct packaging form, such as tape and reel quantities. Confirm RoHS compliance status and halogen-free certification requirements prior to procurement. Ensure the component meets all applicable export control regulations and legal requirements for the intended destination.

Selection Notes

Select this component for applications requiring dual P-channel switching in a compact SO-8 footprint. Evaluate thermal performance based on the junction-to-ambient resistance values provided in the datasheet. Consider the gate threshold voltage and drive voltage requirements to ensure compatibility with the system logic levels.

Part Context

This part belongs to the Alpha & Omega Semiconductor dual MOSFET family. It shares the SO-8 package format with other dual devices but offers specific electrical characteristics tailored for notebook and battery protection applications. The dual configuration allows for space-saving designs compared to using discrete single FETs.

Replacement Considerations

No public confirmed substitute part numbers are available in the source material.