AOSD32338C

$0.11

Description：MOSFET 2N-CH 30V 6A 8SOIC
Series：-

SKU:65785bf7bf27 Category: FET, MOSFET Arrays Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 6A 8SOIC
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：6A (Ta)
Rds On (Max) @ Id, Vgs：30mOhm @ 6A, 10V
Vgs(th) (Max) @ Id：2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：6.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：310pF @ 15V
Power - Max：2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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AOSD32338C

Overview

The AOSD32338C is a dual N-channel MOSFET manufactured by Alpha & Omega Semiconductor Inc. utilizing Trench Power MOSFET technology in an SO-8 package. It features a drain-source voltage (VDS) of 30V and a continuous drain current (ID) of 4A at VGS=10V. The device offers low on-resistance, specified as less than 50mΩ at VGS=10V, less than 57mΩ at VGS=4.5V, and less than 72mΩ at VGS=2.5V. Key electrical parameters include a maximum gate threshold voltage of 1.5V, a total gate charge of 16nC at 10V, and a maximum junction-to-ambient thermal resistance of 100°C/W. The component operates within a temperature range of -55°C to 150°C.

Feature Summary

Dual N-channel configuration with integrated ESD protection
Low on-resistance achieved through Trench Power MOSFET technology
Optimized for load switching applications

Applications

Load switching circuits
Power management modules
General purpose switching applications

Procurement Notes

Verify the specific ordering suffix against official Alpha & Omega Semiconductor documentation to ensure correct packaging and quantity specifications. Confirm RoHS compliance status and halogen-free requirements prior to procurement. Ensure that the selected variant matches the required tape and reel format for automated assembly processes.

Selection Notes

Select this component based on the requirement for a dual N-channel MOSFET with a 30V rating and 4A continuous current capability. Evaluate the on-resistance values at specific gate drive voltages to ensure compatibility with the system's logic levels. Consider the thermal resistance characteristics when designing the PCB layout for adequate heat dissipation under steady-state conditions.

Part Context

The AOSD32338C belongs to the AOSD323 series of dual MOSFETs from Alpha & Omega Semiconductor. This series is designed to provide compact solutions for power switching applications requiring two independent channels in a single package. The SO-8 form factor allows for efficient board space utilization compared to discrete single-channel alternatives.