Single FETs, MOSFETs AOT10N60 product image

AOT10N60

$1.98
  • Description:MOSFET N-CH 600V 10A TO220
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube

SKU:045825d39e33 Category: Brand:

  
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AOT10N60 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 600V 10A TO220. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOT10N60

  • Description:MOSFET N-CH 600V 10A TO220
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):600 V
  • Current - Continuous Drain (Id) @ 25°C:10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:750mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id:4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:40 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:1600 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):250W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220
  • Package / Case:TO-220-3

Single FETs, MOSFETs datasheet and documents for AOT10N60

AOT10N60

Single FETs, MOSFETs Overview

The AOT10N60 is a 600V N-Channel MOSFET fabricated using an advanced high voltage process. It features a maximum continuous drain current of 10A at VGS=10V and a maximum on-resistance of less than 0.75 ohms at VGS=10V. The device includes guaranteed avalanche capability, with single-pulse avalanche energy rated at 580mJ and repetitive avalanche energy at 36mJ. It supports a peak diode recovery dv/dt of 45V/ns and has been tested for UIS and gate resistance.

Single FETs, MOSFETs Feature Summary

  • Advanced high voltage MOSFET process designed for robust performance in AC-DC applications
  • Guaranteed avalanche capability with low RDS(on), Ciss, and Crss characteristics
  • High peak diode recovery dv/dt ruggedness

Single FETs, MOSFETs Applications

  • Offline power supply designs
  • AC-DC converter circuits
  • General purpose switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant required (TO-220, TO-252/DPAK, or TO-220F) as the datasheet covers multiple suffixes under the same electrical specifications. Confirm that the application environment remains within the specified junction temperature range of -55°C to 150°C. Ensure thermal management aligns with the provided junction-to-case thermal resistance values for the selected package type.

Single FETs, MOSFETs Selection Notes

Select this component when designing offline power supplies requiring a balance of low conduction losses and high avalanche ruggedness. The 600V rating suits standard mains voltage rectification stages. Consider the specific thermal impedance of the chosen package (TO-220 vs TO-220F) for heat dissipation calculations. Verify compatibility with drive voltages given the threshold voltage range.

Single FETs, MOSFETs Part Context

This part belongs to Alpha & Omega Semiconductor's lineup of high-voltage N-Channel MOSFETs. It shares core electrical specifications with the AOB10N60 and AOTF10N60, differing primarily in physical packaging. These devices are engineered to replace older generation MOSFETs in existing offline power supply designs due to their improved switching characteristics and robustness.

Single FETs, MOSFETs Replacement Considerations

Public confirmed substitute part numbers: None.

AOT10N60AOT10N60
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