AOT10N60L

Single FETs, MOSFETs Overview

The AOT10N60L is an N-channel power MOSFET from Alpha & Omega Semiconductor Inc., fabricated using an advanced high-voltage process. It features a drain-source voltage (VDS) of 600 V and a continuous drain current (ID) of 10 A at TC=25°C. The device guarantees a maximum on-resistance (RDS(on)) of less than 0.75 Ω at VGS=10V. Key electrical parameters include a gate threshold voltage of 3 to 4.5 V, total gate charge of 31 to 40 nC, and input capacitance of 1100 to 1600 pF. It supports a pulsed drain current of 36 A and offers avalanche energy ratings of 580 mJ single-pulse and 36 mJ repetitive. Thermal resistance junction-to-case is 0.5 °C/W for TO-220 packages.

Single FETs, MOSFETs Feature Summary

• Advanced high-voltage MOSFET process designed for robust performance in AC-DC applications.
• Guaranteed avalanche capability with tested UIS and Rg specifications.
• Low on-resistance and reduced input/output capacitances for efficient switching.
• High dv/dt ruggedness rated at 45 V/ns.

Single FETs, MOSFETs Applications

• Offline power supply designs
• AC-DC converter circuits
• General-purpose switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant required, as the base part number covers multiple form factors including TO-220, TO-263, and TO-220FT. Confirm that the 'L' suffix aligns with the manufacturer's current revision or packaging designation, as datasheets may reference standard suffixes. Ensure compliance with RoHS3 standards if applicable to the specific production batch. Cross-reference the exact ordering code against the latest Alpha & Omega Semiconductor catalog to confirm availability and lead times.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring 600V blocking capability with moderate current handling up to 10A. The low thermal resistance of 0.5 °C/W facilitates effective heat dissipation in through-hole configurations. Consider the 4.5V maximum gate threshold voltage for logic-level compatibility. Evaluate the safe operating area curves for transient load conditions. The guaranteed avalanche rating makes it suitable for inductive load switching where energy absorption is necessary.

Single FETs, MOSFETs Part Context

This device belongs to the AOT/AOB/AOTF series of 600V N-channel MOSFETs manufactured by Alpha & Omega Semiconductor. The series utilizes a common high-voltage process technology optimized for offline power supplies. Variants within the family differ primarily in physical packaging, such as TO-220, TO-263 (D2PAK), and TO-220FT, while maintaining identical electrical characteristics and performance metrics.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include AOB10N60 and AOTF10N60, which share identical electrical specifications but utilize different packages (TO-263 and TO-220FT respectively). Verify pinout compatibility when substituting between these variants due to differing physical footprints.

Single FETs, MOSFETs FAQ

What is the maximum drain-source breakdown voltage?

The Drain-Source Breakdown Voltage (BVDSS) is specified at 600 V.

Is the device tested for avalanche ruggedness?

Yes, the datasheet confirms 100% UIS (Unclamped Inductive Switching) testing and provides specific single-pulse and repetitive avalanche energy ratings.

What is the typical gate charge value?

The total gate charge (Qg) ranges from 31 nC to 40 nC under standard test conditions of VGS=10V, VDS=480V, and ID=10A.