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AOT11S60L is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 600V 11A TO220. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for AOT11S60L
- Description：MOSFET N-CH 600V 11A TO220
- Series：aMOS™
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：399mOhm @ 3.8A, 10V
- Vgs(th) (Max) @ Id：4.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：545 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：178W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220
- Package / Case：TO-220-3
Single FETs, MOSFETs datasheet and documents for AOT11S60L
Single FETs, MOSFETs Overview
The AOT11S60L is a 600V N-channel power MOSFET from Alpha & Omega Semiconductor, utilizing the aMOSTM process. It features a maximum drain-source voltage of 650V and a continuous drain current of 11A at 25°C case temperature. The device has a typical gate charge of 11nC and a maximum on-resistance of 0.399Ω at VGS=10V. It supports a peak pulsed drain current of 45A and includes 100% UIS testing for avalanche ruggedness.
Single FETs, MOSFETs Feature Summary
- Fabricated using advanced aMOSTM high voltage process technology
- Guaranteed avalanche capability with 100% UIS testing
- Optimized low RDS(on) and Qg for switching efficiency
- High dv/dt ruggedness for robust performance
Single FETs, MOSFETs Applications
- Offline power supply designs
- Switching applications requiring avalanche ruggedness
- Power management solutions
Single FETs, MOSFETs Procurement Notes
Verify the specific package variant (TO-220, TO-263, or TO-220F) required for your design, as the base model number corresponds to multiple physical packages. Confirm that the component meets RoHS3 compliance standards before finalizing procurement orders.
Single FETs, MOSFETs Selection Notes
Select this component for designs needing 600V blocking capability with moderate current handling. Ensure thermal management accounts for the junction-to-case resistance. Verify gate drive requirements align with the specified threshold and total gate charge parameters.
Single FETs, MOSFETs Part Context
This part belongs to the aMOSTM family of power transistors designed by Alpha & Omega Semiconductor. It is engineered to deliver high performance in switching applications through integrated process technology and advanced packaging know-how.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes include AOB11S60L and AOTF11S60L. These variants share identical electrical characteristics but differ in physical package configuration.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
