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AOT12N50 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 500V 12A TO220. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for AOT12N50
- Description：MOSFET N-CH 500V 12A TO220
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：500 V
- Current - Continuous Drain (Id) @ 25°C：12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：520mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：37 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1633 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：250W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220
- Package / Case：TO-220-3
Single FETs, MOSFETs datasheet and documents for AOT12N50
Single FETs, MOSFETs Overview
The AOT12N50 is an N-channel power MOSFET fabricated using an advanced high-voltage process. It features a drain-source voltage (Vdss) of 500V and a continuous drain current (Id) of 12A at case temperature. The device offers a maximum on-resistance (Rds(on)) of 520 mΩ at Vgs=10V and Id=6A. Key electrical parameters include a gate charge (Qg) of 37nC, input capacitance (Ciss) of 1633pF, and a threshold voltage (Vgs(th)) of 4.5V. It supports a maximum power dissipation of 250W in a TO-220-3 package.
Single FETs, MOSFETs Feature Summary
- Advanced high-voltage MOSFET process for robust performance
- Standard N-channel configuration suitable for general switching applications
Single FETs, MOSFETs Applications
- AC-DC converter circuits
- General purpose power switching
- High voltage discrete semiconductor applications
Single FETs, MOSFETs Procurement Notes
Verify component authenticity through authorized distribution channels. Confirm package integrity and pin alignment against the TO-220-3 specification. Check datasheet revisions for any manufacturing changes. Ensure storage conditions meet moisture sensitivity level requirements before soldering. Validate thermal management capabilities for the intended power dissipation load.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring 500V blocking capability with moderate current handling. Evaluate thermal resistance constraints given the 250W maximum dissipation rating. Compare Rds(on) values against alternative packages if lower conduction losses are critical. Ensure gate drive voltage meets the 10V requirement for optimal on-state performance.
Single FETs, MOSFETs Part Context
Part of Alpha & Omega Semiconductor's discrete MOSFET portfolio. Designed for high-voltage applications utilizing proprietary fabrication technology. Complements other AOS products like AOI9N50 and AOD950A70 in various power management solutions.
Single FETs, MOSFETs Replacement Considerations
Check for direct substitutes within the AOT12N50 family or equivalent voltage/current ratings from other manufacturers. Verify pinout compatibility for TO-220-3 packages. Review updated datasheets for potential parameter variations in replacement parts.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
