AOT12N60FDL

Single FETs, MOSFETs Overview

The AOT12N60FDL is an N-channel Power MOSFET manufactured by Alpha & Omega Semiconductor Inc. It features a 600V drain-source voltage (Vdss) and a continuous drain current (Id) of 12A at case temperature. The device utilizes Metal-Oxide semiconductor technology and is housed in a TO-220 through-hole package. Key electrical parameters include a gate-source threshold voltage (Vgs(th)) maximum of 4.5V at 250µA, a maximum gate charge (Qg) of 12nC at 10V, and a maximum input capacitance (Ciss) of 370pF at 25V. The maximum power dissipation is 83W at case temperature, with an operating junction temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

• High-voltage capability with 600V drain-source breakdown
• Robust thermal performance supporting 83W power dissipation
• Low gate charge for efficient switching applications

Single FETs, MOSFETs Applications

• Industrial motor control systems
• Power supply circuits requiring high voltage isolation
• General-purpose switching applications in industrial equipment

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and RoHS compliance status directly with the manufacturer or authorized distributors before procurement. Confirm that the TO-220 package dimensions match the target PCB footprint and thermal management requirements. Ensure the component meets all environmental regulations applicable to the final assembly region.

Single FETs, MOSFETs Selection Notes

Select this component when a through-hole N-channel MOSFET with 600V rating and 12A current capacity is required. Consider the TO-220 package for ease of manual assembly or heatsink mounting. Evaluate the 4.5V threshold voltage against the available gate drive voltage to ensure full enhancement. Compare thermal resistance values if direct board mounting without additional heatsinking is planned.

Single FETs, MOSFETs Part Context

This part belongs to the AOT series of N-channel MOSFETs from Alpha & Omega Semiconductor. It is designed for general-purpose power switching applications where high voltage blocking and moderate current handling are necessary. The TO-220 package provides a reliable mechanical connection and facilitates heat dissipation through the metal tab.

Single FETs, MOSFETs Replacement Considerations

Potential substitutes include other 600V N-channel MOSFETs in TO-220 packages such as FDP10N60NZ from onsemi. Verify pinout compatibility, thermal characteristics, and electrical limits before substitution.