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AOT13N50 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 500V 13A TO220. Review the specifications below when checking this part for your BOM.
The AOT13N50 is an N-channel power MOSFET manufactured by Alpha & Omega Semiconductor Inc. It features a drain-source voltage (Vdss) of 500 V and a continuous drain current (Id) of 13 A at case temperature, with a maximum power dissipation of 250 W at case temperature. The device utilizes a TO-220 through-hole package. Key electrical characteristics include a gate-source voltage (Vgs) rating of ±20 V and a threshold voltage (Vgs(th)) maximum of 4 V at 250 µA. The component operates within a junction temperature range of -55°C to 150°C.
Verify the specific datasheet revision and manufacturer lot codes upon procurement. Confirm that the TO-220 package dimensions match the target PCB footprint and thermal interface requirements. Ensure compliance with RoHS directives if applicable to the end product. Cross-reference the part number with official Alpha & Omega Semiconductor documentation to confirm availability and lead times from authorized distributors.
Select this component when a high-voltage N-channel MOSFET is required for through-hole assembly. The 500 V rating suits applications exceeding standard low-voltage limits. Evaluate the thermal resistance and heatsinking capabilities against the expected 250 W dissipation limit. Compare the 13 A current rating against peak load requirements to ensure adequate margin during operation.
This component belongs to the Alpha & Omega Semiconductor N-channel MOSFET family, designed for general-purpose power switching. The TO-220 package is a standard industry form factor for medium-to-high power discrete semiconductors. The series emphasizes reliability and thermal performance for industrial and commercial power management solutions.
Consult official substitution guides for compatible parts. Verify pinout compatibility and electrical parameter equivalence before replacement.
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