AOT190A60L

Single FETs, MOSFETs Overview

The AOT190A60L is a single N-channel Power MOSFET from Alpha & Omega Semiconductor, belonging to the aMOS5™ series. It features a 600 V drain-source voltage (Vdss) and a continuous drain current of 20 A at case temperature. The device exhibits a maximum on-resistance of 190 mΩ at 7.6 A with a 10 V gate drive. Key electrical parameters include a gate charge of 34 nC and an input capacitance of 1935 pF. It operates within a junction temperature range of -55°C to 150°C and is housed in a TO-220F package.

Single FETs, MOSFETs Feature Summary

• Utilizes advanced aMOS5™ trench technology for optimized switching performance
• Designed for high-voltage applications with 600 V breakdown capability
• Provides robust thermal management through a dedicated lead frame structure

Single FETs, MOSFETs Applications

• High-voltage power supply circuits
• Industrial motor control systems
• Uninterruptible power supply (UPS) units

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'L' against the manufacturer's latest datasheet to confirm packaging details and compliance status. Ensure the component matches the required TO-220F footprint and pinout configuration for your PCB design. Cross-reference the part number with official Alpha & Omega Semiconductor documentation to validate authenticity and current production status before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a 600 V rating is required alongside moderate current handling capabilities. The 190 mΩ on-resistance offers a balance between conduction losses and cost efficiency. Consider the TO-220F package for applications requiring direct mounting to heatsinks without additional insulators. Evaluate the gate charge requirements to ensure compatibility with available driver circuitry.

Single FETs, MOSFETs Part Context

This device is part of the aMOS5™ family, which integrates Alpha & Omega Semiconductor's proprietary trench technology. This series focuses on improving figure-of-merit metrics by reducing both on-resistance and gate charge. The AOT190A60L specifically targets medium-power applications where reliability and thermal stability are critical operational factors.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes may include other 600 V N-channel MOSFETs in the TO-220F package with comparable Rds(on) and current ratings. Verify that any replacement maintains identical pinout configurations and thermal characteristics to ensure seamless integration without redesigning the host circuit board.