AOT20B65M1

$1.06

Description：IGBT 650V 40A TO-220
Series：Alpha IGBT™

SKU:c1c2536b3ee9 Category: Single IGBTs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：IGBT 650V 40A TO-220
Series：Alpha IGBT™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：40 A
Current - Collector Pulsed (Icm)：60 A
Vce(on) (Max) @ Vge, Ic：2.15V @ 15V, 20A
Power - Max：227 W
Switching Energy：470µJ (on), 270µJ (off)
Input Type：Standard
Gate Charge：46 nC
Td (on/off) @ 25°C：26ns/122ns
Test Condition：400V, 20A, 15Ohm, 15V
Reverse Recovery Time (trr)：322 ns
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3
Supplier Device Package：TO-220
Grade：-
Qualification：-

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AOT20B65M1

Overview

The AOT20B65M1 is a 650V, 20A Alpha IGBT with an integrated soft and fast recovery anti-parallel diode. It utilizes the latest Alpha IGBT technology to achieve low VCE(sat) for high efficiency and low turn-off switching loss. The device features very good EMI behavior and high short-circuit ruggedness, supporting a maximum short-circuit time of 5 μs at TJ≤175°C. Packaged in TO-220, it operates within a junction temperature range of -55°C to 175°C.

Feature Summary

Latest Alpha IGBT technology providing high efficient turn-on di/dt controllability
Very fast and soft recovery freewheeling diode for low reverse recovery charge
High short-circuit ruggedness with 5 μs withstand capability

Applications

Motor Drives
Sewing Machines
Home Appliances
Fan, Pumps, Vacuum Cleaner
Other Hard Switching Applications

Procurement Notes

Verify the specific ordering suffix against official Alpha & Omega Semiconductor documentation to confirm package type and reel specifications. Confirm RoHS compliance status and ensure the component meets the required thermal management standards for the intended application environment before finalizing procurement.

Selection Notes

Select this component for hard switching applications requiring high efficiency and low EMI. Ensure the gate resistance and drive voltage align with the specified VGE=15V conditions. Verify that the thermal design accommodates the junction-to-case thermal resistance of 0.66°C/W for the IGBT and 1.5°C/W for the diode under expected load currents.

Part Context

This part belongs to the Alpha IGBT family from Alpha & Omega Semiconductor. It is designed as a robust power switching solution for medium-power industrial and consumer electronics. The integration of the anti-parallel diode simplifies circuit design by eliminating the need for external freewheeling diodes in many configurations.

Replacement Considerations

Compatible variants include AOK20B65M1 (TO-247 tube) and AOB20B65M1 (TO-263 tape & reel). These share identical electrical characteristics but differ in packaging form factor. Verify pinout compatibility and thermal interface requirements when substituting between these package types.

FAQ

What is the maximum short-circuit withstand time for the AOT20B65M1?

The device supports a maximum short-circuit time of 5 μs, provided the junction temperature remains below 175°C and the collector-emitter voltage is limited to 400V.

How does the integrated diode perform during reverse recovery?

The anti-parallel diode features very fast and soft recovery characteristics, minimizing reverse recovery charge (Qrr) and peak reverse recovery current (Irm) to reduce switching losses and EMI.