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AOT20C60 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 600V 20A TO220. Review the specifications below when checking this part for your BOM.
The AOT20C60 is a 600V N-Channel MOSFET utilizing AlphaMOS-II trench technology. It features a maximum drain-source voltage of 600V and a continuous drain current of 20A at 25°C case temperature. The device exhibits a maximum on-resistance of 0.25Ω at VGS=10V and ID=10A, with a typical gate charge of 52nC. It supports a pulsed drain current of 145A and includes avalanche energy ratings of 1470mJ. Thermal characteristics include a junction-to-case resistance of 0.27°C/W for the TO-220 package.
Verify the specific package variant required for the design, such as AOT20C60L for TO-220 or AOB20C60L for TO-263. Confirm that the component meets the intended environmental compliance requirements, specifically RoHS and Halogen Free status. Ensure the application does not involve life support devices, as these uses are explicitly unauthorized by the manufacturer.
Select this component for designs requiring a 600V rating with a 20A continuous current capacity. The low gate charge of 52nC supports efficient switching performance in power conversion circuits. Consider the thermal resistance values when designing heatsinking solutions to maintain junction temperatures within the specified -55°C to 150°C operating range.
The AOT20C60 belongs to the AOT20C60/AOB20C60/AOTF20C60 family from Alpha & Omega Semiconductor. This series shares core electrical specifications but differs in physical packaging options including TO-220, TO-263 (D2PAK), and TO-220F. The product line emphasizes high current capability and reliability for general-purpose power switching applications.
Direct substitutes are not listed in the provided documentation. Designers should evaluate other 600V N-Channel MOSFETs with comparable RDS(ON) and current ratings if replacement is necessary.
The device has a single pulsed avalanche energy rating of 1470mJ.
Yes, the body diode reverse recovery time is 665ns under test conditions of IF=20A and dI/dt=100A/μs.
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