Single FETs, MOSFETs AOT20N60L product image

AOT20N60L

$1.05
  • Description:MOSFET N-CH 600V 20A TO220
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube

SKU:e0ed49b1ec97 Category: Brand:

  
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AOT20N60L is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 600V 20A TO220. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOT20N60L

  • Description:MOSFET N-CH 600V 20A TO220
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):600 V
  • Current - Continuous Drain (Id) @ 25°C:20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:370mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id:4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:74 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:3680 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):417W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220
  • Package / Case:TO-220-3

Single FETs, MOSFETs datasheet and documents for AOT20N60L

AOT20N60L

Single FETs, MOSFETs Overview

The AOT20N60L is an N-channel power MOSFET manufactured by Alpha & Omega Semiconductor Inc. utilizing the advanced aMOSTM high voltage process technology. It features a drain-source voltage (Vdss) rating of 600 V and a continuous drain current (Id) of 20 A at case temperature. The device offers a maximum on-resistance (Rds(on)) of 0.35 ohms at 10 V gate drive. Key electrical characteristics include a typical gate charge of 20 nC and an output energy loss (Eoss) of 4.9 µJ at 400 V. The component is designed for robust switching performance with guaranteed avalanche capability.

Single FETs, MOSFETs Feature Summary

  • Fabricated using advanced aMOSTM high voltage process technology for enhanced performance and robustness in switching applications.
  • Provides low on-resistance, low gate charge, and minimized output energy loss to facilitate rapid adoption in offline power supply designs.
  • Features guaranteed avalanche capability and has undergone 100% Unclamped Inductive Switching (UIS) testing.

Single FETs, MOSFETs Applications

  • Offline power supply designs
  • Switching applications requiring high voltage robustness
  • Power management systems

Single FETs, MOSFETs Procurement Notes

Verify the exact datasheet specifications against the manufacturer's official documentation before integration. Confirm that the package type and pinout match the design requirements. Ensure compliance with RoHS and REACH regulations as specified in the product environmental classification. Check for any recent Product Change Notifications (PCNs) regarding manufacturing location or material changes.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a 600 V N-channel MOSFET with a 20 A current rating. Consider the thermal dissipation capabilities and the specific Rds(on) values at the intended operating gate voltage. Evaluate the gate charge and switching losses relative to the system's frequency requirements. Ensure the PCB layout supports the thermal performance needed for the TO-220 or D2PAK package variant used.

Single FETs, MOSFETs Part Context

This part belongs to the AOT series of power transistors from Alpha & Omega Semiconductor. It shares functional similarities with other devices in the aMOSTM family, such as the AOB20S60 and AOK20S60, which also target high-voltage switching applications. The series is characterized by optimized trade-offs between conduction losses and switching speeds.

Single FETs, MOSFETs Replacement Considerations

Potential substitutes within the same family include the AOB20S60 and AOK20S60. Verify pin compatibility and thermal resistance differences before substitution. Cross-reference datasheets to ensure equivalent voltage, current, and switching performance metrics are met.

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