AOT254L

Single FETs, MOSFETs Overview

The AOT254L is a 150V N-Channel MOSFET utilizing Trench technology optimized for high-frequency switching. It features a maximum continuous drain current of 32A at 25°C and a pulsed drain current of 125A. The device exhibits a maximum on-resistance of 46mΩ at VGS=10V and 53mΩ at VGS=4.5V. Key electrical parameters include a gate threshold voltage range of 1.7V to 2.7V, total gate charge of 27nC to 40nC at 10V, and input capacitance of 2150pF. Thermal characteristics specify a junction-to-case resistance of 1.2°C/W and junction-to-ambient resistance of 60°C/W.

Single FETs, MOSFETs Feature Summary

• Optimized Trench MOSFET technology minimizes both conduction and switching power losses through low RDS(ON) and capacitance values.
• Validated for reliability with 100% Unclamped Inductive Switching (UIS) testing and Gate Resistance (Rg) verification.
• Capable of handling repetitive avalanche energy and current ratings suitable for inductive load applications.

Single FETs, MOSFETs Applications

• Boost converters
• Synchronous rectifiers
• Consumer power supplies
• Telecom power supplies
• Industrial power supplies
• LED backlighting

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant required, as the datasheet covers both TO-220 (AOT254L) and TO-263 D2PAK (AOB254L) configurations. Confirm thermal management requirements align with the specified junction-to-ambient or junction-to-case resistance values based on the intended PCB design and heatsinking strategy. Ensure compatibility with the 150V drain-source voltage rating for the target circuit topology.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring efficient high-frequency switching with low conduction losses. The dual gate threshold specifications support operation at both standard 10V and lower 4.5V drive levels. Consider the thermal derating curves when determining continuous current limits under elevated case temperatures. The robust avalanche capability makes it suitable for inductive loads where transient energy absorption is necessary.

Single FETs, MOSFETs Part Context

This part belongs to the Alpha & Omega Semiconductor portfolio of power semiconductors. It is closely related to the AOB254L, which shares identical electrical specifications but utilizes a surface-mount TO-263 D2PAK package instead of the through-hole TO-220 package used by the AOT254L. Both variants are designed for similar power management applications.

Single FETs, MOSFETs Replacement Considerations

The AOB254L is the direct pin-compatible alternative offering identical electrical performance in a surface-mount TO-263 D2PAK package. When substituting, verify that the PCB footprint accommodates the different physical package dimensions between TO-220 and TO-263.

Single FETs, MOSFETs FAQ

What is the maximum junction temperature for the AOT254L?

The maximum junction temperature is 175°C, although power dissipation calculations often reference a 150°C limit depending on the board design and ambient conditions.

Is the AOT254L tested for avalanche ruggedness?

Yes, the device undergoes 100% Unclamped Inductive Switching (UIS) testing to ensure reliability under inductive load switching conditions.

How does the on-resistance vary with gate voltage?

The maximum on-resistance is specified as less than 46mΩ at VGS=10V and less than 53mΩ at VGS=4.5V, allowing for efficient operation at lower drive voltages.