AOT2610L

$0.49

Description：MOSFET N-CH 60V 9A/55A TO220
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube

SKU:540de276b13c Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

AOT2610L is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 60V 9A/55A TO220. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOT2610L

Description：MOSFET N-CH 60V 9A/55A TO220
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：9A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：10.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2007 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta), 75W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for AOT2610L

AOT2610L

Single FETs, MOSFETs Overview

The AOT2610L is a 60V N-Channel MOSFET utilizing trench technology optimized for high-frequency switching. It features a maximum drain-source voltage of 60V and a continuous drain current of 55A at 25°C. The device achieves an on-resistance below 10.7mΩ at VGS=10V and 13.5mΩ at VGS=4.5V. Key electrical parameters include a gate threshold voltage of 2.5V max, total gate charge of 30nC at 10V, and input capacitance of 2007pF. Thermal characteristics specify a junction-to-case resistance of 2.0°C/W and a junction-to-ambient resistance of 60°C/W.

Single FETs, MOSFETs Feature Summary

Optimized trench MOSFET technology minimizes both conduction and switching power losses through low RDS(ON) and capacitance values.
Validated reliability through 100% testing for Unclamped Inductive Switching (UIS) capability and gate resistance.
Designed for efficient high-frequency performance suitable for boost converters and synchronous rectification applications.

Single FETs, MOSFETs Applications

Boost converters
Synchronous rectifiers
Consumer power supplies
Telecom power supplies
Industrial power supplies
LED backlighting

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant required, as the datasheet covers both TO-220 (AOT2610L) and TO-220F (AOTF2610L). Confirm thermal management requirements against the specified junction-to-case and junction-to-ambient resistances. Ensure the application design accounts for the absolute maximum ratings, particularly the 175°C maximum junction temperature limit during operation.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring low on-resistance at standard 10V drive levels or improved efficiency at lower 4.5V drives. Consider the TO-220 package for general mounting or TO-220F if insulation requirements are necessary. Evaluate the thermal dissipation capabilities based on the specific PCB copper area and airflow conditions to ensure the junction temperature remains within safe operating limits.

Single FETs, MOSFETs Part Context

This part belongs to Alpha & Omega Semiconductor's N-Channel MOSFET lineup, specifically leveraging advanced trench technology. It serves as a high-current solution for 60V systems, offering superior switching performance compared to standard planar devices. The product line targets efficiency improvements in various power conversion topologies.