Single FETs, MOSFETs AOT412 product image

AOT412

$0.65
  • Description:MOSFET N-CH 100V 8.2A/60A TO220
  • Series:SDMOS™
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube

SKU:747d7a3630c9 Category: Brand:

  
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AOT412 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 100V 8.2A/60A TO220. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOT412

  • Description:MOSFET N-CH 100V 8.2A/60A TO220
  • Series:SDMOS™
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:8.2A (Ta), 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):7V, 10V
  • Rds On (Max) @ Id, Vgs:15.8mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:3.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:54 nC @ 10 V
  • Vgs (Max):±25V
  • Input Capacitance (Ciss) (Max) @ Vds:3220 pF @ 50 V
  • FET Feature:-
  • Power Dissipation (Max):2.6W (Ta), 150W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220
  • Package / Case:TO-220-3

Single FETs, MOSFETs datasheet and documents for AOT412

AOT412

Single FETs, MOSFETs Overview

The AOT412 is a 100V N-Channel MOSFET utilizing SDMOS trench technology. It offers a continuous drain current of 60A at 25°C and a maximum on-resistance of 15.8mΩ at VGS=10V. The device features low gate charge (Qg max 54nC) and reverse recovery characteristics, ensuring efficient switching. It supports a junction temperature range of -55°C to 175°C and includes 100% UIS and Rg testing for reliability.

Single FETs, MOSFETs Feature Summary

  • SDMOS trench technology combines low on-resistance with low gate charge for high efficiency.
  • Controlled switching behavior suitable for PWM and load switching applications.
  • 100% Unclamped Inductive Switching (UIS) tested for ruggedness.

Single FETs, MOSFETs Applications

  • PWM control circuits
  • Load switching applications
  • General purpose power management

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant required, as the datasheet covers both TO-220 and TO-263 (D2PAK) configurations. Confirm that the selected component meets the thermal dissipation requirements for the intended operating environment, particularly regarding junction-to-ambient resistance in still air versus heatsink-mounted scenarios.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring 100V breakdown with moderate current handling up to 60A. Consider the TO-220 package for through-hole mounting or TO-263 for surface mount needs. Ensure the driving circuit can provide sufficient gate voltage to minimize RDS(ON), noting performance differences between 7V and 10V drive levels.

Single FETs, MOSFETs Part Context

The AOT412 belongs to Alpha & Omega Semiconductor's SDMOS product line, designed for universal power applications. It is part of a series including the AOB412L, sharing similar electrical specifications but potentially differing in packaging. The technology focuses on balancing conduction losses with switching speed.

Single FETs, MOSFETs Replacement Considerations

Public confirmed substitute part numbers are not provided in the source material. Cross-reference with other 100V N-Channel MOSFETs offering comparable RDS(ON) and ID ratings if substitution is necessary.

Single FETs, MOSFETs FAQ

What is the maximum gate-source voltage rating?

The absolute maximum Gate-Source Voltage (VGS) is ±25V.

Is the device tested for avalanche energy?

Yes, the datasheet specifies that the device undergoes 100% Unclamped Inductive Switching (UIS) testing.

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