Single FETs, MOSFETs AOT460 product image

AOT460

  • Description:MOSFET N-CH 60V 85A TO220
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube

SKU:2bb1b968e00b Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

AOT460 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 60V 85A TO220. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOT460

  • Description:MOSFET N-CH 60V 85A TO220
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:85A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:7.5mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:88 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:4560 pF @ 30 V
  • FET Feature:-
  • Power Dissipation (Max):268W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220
  • Package / Case:TO-220-3

Single FETs, MOSFETs datasheet and documents for AOT460

AOT460

Single FETs, MOSFETs Overview

The AOT460 is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to deliver a Drain-Source Voltage (VDS) of 60 V and a continuous drain current (ID) of 85 A at VGS = 10 V. The device features a maximum static drain-source on-resistance (RDS(ON)) of less than 7.5 mΩ at VGS = 10 V. It is housed in a TO-220 package with a junction temperature range of -55 °C to 175 °C.

Single FETs, MOSFETs Feature Summary

  • Advanced trench technology design for low gate charge and excellent RDS(ON).
  • 100% Unclamped Inductive Switching (UIS) tested for avalanche ruggedness.
  • RoHS compliant and halogen-free construction.

Single FETs, MOSFETs Applications

  • Uninterruptible Power Supply (UPS) systems.
  • High current switching applications.

Single FETs, MOSFETs Procurement Notes

Verify the component datasheet revision and manufacturer specifications against the requested part number before integration. Confirm that the TO-220 package dimensions and pinout align with the target PCB footprint. Ensure thermal management designs account for the specified junction-to-case thermal resistance values under expected operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component for circuits requiring high current handling capabilities up to 85 A with low conduction losses. The 60 V rating suits standard 48 V or lower bus architectures. Consider the thermal characteristics and heatsinking requirements, as power dissipation limits are heavily dependent on case temperature and ambient conditions.

Single FETs, MOSFETs Part Context

This part belongs to the Alpha & Omega Semiconductor MOSFET portfolio, specifically designed for power switching roles. It serves as a robust solution for applications demanding high efficiency and reliability in medium-voltage environments.

Single FETs, MOSFETs Replacement Considerations

The AOT460L is electrically identical to the AOT460 and can be used as a direct substitute without circuit modifications.

Single FETs, MOSFETs FAQ

Is the AOT460 suitable for unclamped inductive switching?

Yes, the device is 100% UIS tested and rated for repetitive avalanche energy.

What is the maximum junction temperature for the AOT460?

The maximum junction temperature is 175 °C.

AOT460AOT460

Click on the inquiry