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The AOT5B60D is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Alpha & Omega Semiconductor Inc. It features a maximum collector-emitter breakdown voltage of 600 V and a continuous collector current of 23 A at 25°C. The device operates within a junction temperature range of -55°C to 175°C and is housed in a TO-220 package. Key electrical characteristics include a maximum gate charge of 9.4 nC, a typical turn-on delay time of 12 ns, and a reverse recovery time of 98 ns. The component is part of the Alpha IGBT series and is currently marked as not recommended for new designs.
The AOT5B60D belongs to the Alpha IGBT series from Alpha & Omega Semiconductor Inc., designed for medium-power switching applications. This specific model utilizes a TO-220 through-hole package, distinguishing it from surface-mount variants or higher-current modules within the manufacturer's broader portfolio. It represents a standard discrete IGBT solution for general-purpose high-voltage switching tasks.
Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult official cross-reference lists or contact the manufacturer directly for qualified alternatives.