AOT5N60

Single FETs, MOSFETs Overview

The AOT5N60 is a 600V N-Channel Power MOSFET manufactured by Alpha & Omega Semiconductor Inc. It features a maximum continuous drain current of 5A and a power dissipation rating of 24W at case temperature. The device utilizes TO-220AB through-hole packaging with a single FET configuration. Key electrical parameters include a gate-source voltage limit of ±30V, a threshold voltage of 4V at 250µA, and a maximum gate charge of 18nC at 10V. Input capacitance is specified at 1100pF at 25V. The component operates within a junction temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

• High-voltage N-channel conduction capability for robust switching applications
• Through-hole mounting design for secure mechanical attachment
• Optimized gate charge characteristics for efficient drive requirements

Single FETs, MOSFETs Applications

• General-purpose power switching circuits
• DC-DC converter topologies
• Inductive load driving systems

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and manufacturing lot details upon order confirmation. Confirm that the TO-220AB package dimensions match the target PCB footprint requirements. Ensure thermal management solutions align with the 24W case dissipation rating under intended operating conditions. Check for any recent product change notices affecting pinout or material composition.

Single FETs, MOSFETs Selection Notes

Select this component when a 600V blocking voltage and 5A current capacity are required in a standard through-hole package. Consider the thermal resistance characteristics relative to the available heatsinking area. Evaluate the gate charge specifications against the driving circuit's output current capabilities to ensure adequate switching speeds without excessive driver stress.

Single FETs, MOSFETs Part Context

This part belongs to the high-voltage MOSFET category from Alpha & Omega Semiconductor. It serves as a discrete power switch solution for medium-power applications. The TO-220AB package provides a balance between thermal performance and ease of assembly for prototyping and low-volume production environments.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 600V Vdss, 5A Id, and TO-220AB package. Verify equivalent Rds(on) and Qg values to maintain circuit efficiency. Cross-reference with other manufacturers' 600V N-Channel MOSFETs in similar packages.