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AOT66613L is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 60V 44.5A/120A TO220. Review the specifications below when checking this part for your BOM.
The AOT66613L is a 60V N-Channel AlphaSGT™ Trench Power MOSFET in a TO-220 package. It features a maximum drain-source voltage (BVDSS) of 60V and a continuous drain current (ID) of 44.5A at Ta=25°C, rising to 120A at Tc=25°C. The on-resistance (RDS(ON)) is less than 2.5mΩ at VGS=10V and 20A, and less than 3.0mΩ at VGS=8V and 20A. Gate charge (Qg) is 110nC max at VGS=10V. Thermal resistance junction-to-case (RθJC) is 0.48°C/W, with power dissipation up to 260W at Tc=25°C.
Verify the specific ordering suffix matches the required package type, as the L suffix denotes the TO-220 tube form factor. Confirm compliance requirements against the datasheet's RoHS and REACH status before finalizing procurement specifications.
Select this component for applications requiring high current handling in a through-hole package. Ensure thermal management design accounts for the specified RθJA and RθJC values to maintain junction temperature within the -55°C to 150°C operating range under expected load conditions.
This part belongs to the AlphaSGT™ series from Alpha & Omega Semiconductor Inc., designed for power management solutions. It utilizes advanced trench technology to optimize the figure of merit between gate charge and on-resistance, targeting high-volume consumer and industrial electronics.
The AOB66613L shares identical electrical characteristics but uses a TO-263 tape and reel package. Verify pinout compatibility and mechanical footprint differences if substituting.
Yes, the datasheet confirms that every unit is 100% UIS tested.
The maximum gate-source voltage (VGS) is ±20V.
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