Single FETs, MOSFETs AOT66920L product image

AOT66920L

$2.31
  • Description:MOSFET N-CH 100V 22.5A/80A TO220
  • Series:AlphaSGT™
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube

SKU:bd635ff8c7ae Category: Brand:

  
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AOT66920L is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 100V 22.5A/80A TO220. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOT66920L

  • Description:MOSFET N-CH 100V 22.5A/80A TO220
  • Series:AlphaSGT™
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:22.5A (Ta), 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:8mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:50 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:2500 pF @ 50 V
  • FET Feature:-
  • Power Dissipation (Max):8.3W (Ta), 100W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220
  • Package / Case:TO-220-3

Single FETs, MOSFETs datasheet and documents for AOT66920L

AOT66920L

Single FETs, MOSFETs Overview

The AOT66920L is a 100V N-Channel Power MOSFET utilizing AlphaSGT™ trench technology in a TO-220 package. It features a maximum drain-source voltage (VDS) of 100V and continuous drain current (ID) ratings of 22.5A at Ta=25°C and 80A at Tc=25°C. The device exhibits low on-resistance, with RDS(ON) less than 8mΩ at VGS=10V and 20A, and less than 10.5mΩ at VGS=4.5V. Total gate charge (Qg) is typically 50nC at VGS=10V. Thermal performance includes a junction-to-case resistance (RθJC) of 1.25°C/W and a junction-to-ambient resistance (RθJA) of 60°C/W.

Single FETs, MOSFETs Feature Summary

  • AlphaSGT™ trench technology for optimized switching performance
  • Logic level driving capability for efficient gate control
  • Excellent figure of merit (QG x RDS(ON))
  • 100% tested for Unclamped Inductive Switching (UIS)

Single FETs, MOSFETs Applications

  • High frequency switching circuits
  • Synchronous rectification applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to confirm the package type and reel configuration. Confirm RoHS compliance status as required by project specifications. Ensure thermal management design aligns with the provided junction-to-case and junction-to-ambient thermal resistance values for the intended operating environment.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring robust 100V blocking capability with high current handling in through-hole packages. Consider the logic-level drive threshold if interfacing directly with lower voltage control signals. Evaluate thermal dissipation requirements against the specified power derating curves for ambient temperature conditions.

Single FETs, MOSFETs Part Context

This part belongs to the AlphaSGT™ series of N-Channel MOSFETs from Alpha & Omega Semiconductor. It shares core electrical characteristics with surface-mount variants like the AOB66920L, differing primarily in packaging format. The series emphasizes low on-resistance and fast switching speeds suitable for modern power conversion topologies.

Single FETs, MOSFETs Replacement Considerations

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