AOTF10N60CL

Single FETs, MOSFETs Overview

The AOTF10N60CL is a through-hole N-channel power MOSFET from Alpha & Omega Semiconductor, part of the aMOS5 series. It features a TO-220F package with a drain-source voltage (Vdss) of 600 V and a continuous drain current (Id) of 10 A at 25°C. The device exhibits a maximum on-resistance (Rds(on)) of 1.1 Ω at Vgs=10V and Id=5A. Key electrical parameters include a gate charge (Qg) of 18 nC at 10 V, an input capacitance (Ciss) of 730 pF at 100 V, and a threshold voltage (Vgs(th)) of 4.0 V max at 250µA. It supports a maximum power dissipation of 40 W (Tc) and operates within a junction temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

• Advanced high-voltage MOSFET process designed for robust performance in AC-DC applications
• Guaranteed avalanche capability for improved reliability in offline power supply designs
• Low on-resistance and capacitance characteristics to enhance system efficiency

Single FETs, MOSFETs Applications

• Offline power supply designs
• AC-DC converter circuits
• General-purpose switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'CL' against the official Alpha & Omega Semiconductor datasheet to confirm exact packaging and material compliance details. Ensure the component matches the required thermal and electrical specifications for the target design. Cross-reference ordering information directly with manufacturer documentation to avoid discrepancies in variant identification.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring 600 V blocking voltage and moderate current handling in through-hole configurations. The TO-220F package facilitates manual assembly or wave soldering processes. Evaluate the 1.1 Ω on-resistance against thermal management requirements to ensure adequate heat dissipation without excessive heatsinking in the final application.

Single FETs, MOSFETs Part Context

This device belongs to the aMOS5 series from Alpha & Omega Semiconductor, which utilizes advanced high-voltage processes. The family includes variants like AOT10N60 and AOB10N60, offering similar electrical profiles but differing in package types such as TO-220 or DPAK. The series is engineered to deliver low Rds(on) and capacitance for efficient power conversion.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include AOT10N60 and AOB10N60 from the same manufacturer, provided package compatibility is addressed. Verify that alternative components meet the 600 V rating and 10 A current capacity while maintaining comparable gate charge and on-resistance values for equivalent circuit performance.

Single FETs, MOSFETs FAQ

Is the AOTF10N60CL tested for avalanche ruggedness?

Yes, the device features guaranteed avalanche capability, ensuring robustness in applications where unclamped inductive switching may occur.

What is the maximum gate-source voltage rating?

The maximum gate-source voltage (Vgs) is ±20 V, consistent with standard MOSFET gate oxide limitations.