AOTF11N62L

Single FETs, MOSFETs Overview

The AOTF11N62L is a 620V N-Channel MOSFET in a TO-220F package. It features a maximum drain-source voltage of 620V and a continuous drain current of 11A at 25°C case temperature. The on-resistance is typically 0.56Ω at VGS=10V and ID=5.5A, with a maximum of 0.65Ω. Gate threshold voltage ranges from 3.3V to 4.5V. Total gate charge is typically 30.6nC at VGS=10V. Power dissipation is 30W at 25°C case temperature. Thermal resistance junction-to-case is 3.2°C/W.

Single FETs, MOSFETs Feature Summary

• Advanced high-voltage MOSFET process designed for robust performance in AC-DC applications.
• Guaranteed avalanche capability with 100% UIS testing for reliable operation in offline power supplies.
• Low on-resistance and capacitance characteristics to support efficient switching designs.

Single FETs, MOSFETs Applications

• Offline power supply designs
• AC-DC converter circuits
• General purpose switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific part number suffix 'L' indicates halogen-free compliance as per manufacturer documentation. Confirm the package type matches the required TO-220F footprint. Ensure the sourcing channel provides original manufacturer data sheets for electrical parameter validation before integration into critical circuit designs.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high voltage blocking capability up to 620V. Consider the thermal resistance and power dissipation limits when designing heatsinking solutions. Evaluate the gate charge requirements against the driving circuit capabilities to ensure adequate switching speed and minimize switching losses during operation.

Single FETs, MOSFETs Part Context

This device belongs to the Alpha & Omega Semiconductor lineup of high-voltage N-Channel MOSFETs. It utilizes an advanced process technology optimized for offline power conversion. The 'L' suffix denotes a halogen-free variant of the standard AOTF11N62 model, maintaining identical electrical specifications while adhering to environmental material standards.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 620V rating, TO-220F package, and similar RDS(on) values. Verify pinout compatibility and thermal characteristics. Cross-reference datasheets for avalanche energy ratings and gate charge parameters to ensure functional equivalence in existing circuit layouts.

Single FETs, MOSFETs FAQ

What does the 'L' suffix indicate in the part number AOTF11N62L?

The 'L' suffix indicates that the device is manufactured using halogen-free materials, complying with specific environmental standards while maintaining the same electrical performance as the standard version.

Is the AOTF11N62L tested for avalanche ruggedness?

Yes, the datasheet specifies that the device undergoes 100% Unclamped Inductive Switching (UIS) testing to guarantee avalanche capability and robustness.