Single FETs, MOSFETs AOTF11S60L product image

AOTF11S60L

$0.83
  • Description:MOSFET N-CH 600V 11A TO220-3F
  • Series:aMOS™
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube

SKU:5c8eaab5e3b2 Category: Brand:

  
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AOTF11S60L is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 600V 11A TO220-3F. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOTF11S60L

  • Description:MOSFET N-CH 600V 11A TO220-3F
  • Series:aMOS™
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):600 V
  • Current - Continuous Drain (Id) @ 25°C:11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:399mOhm @ 3.8A, 10V
  • Vgs(th) (Max) @ Id:4.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:545 pF @ 100 V
  • FET Feature:-
  • Power Dissipation (Max):38W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220F
  • Package / Case:TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for AOTF11S60L

AOTF11S60L

Single FETs, MOSFETs Overview

The AOTF11S60L is a 600V N-channel power MOSFET in a TO-220F package. It features a maximum drain current of 11A and a peak pulsed current of 45A. The device has a maximum on-resistance of 0.399 ohms at Vgs=10V and Id=3.8A, with a typical gate charge of 11nC. It includes an integrated body diode with a reverse recovery time of 250ns. The component is rated for junction temperatures up to 150°C and offers guaranteed avalanche capability.

Single FETs, MOSFETs Feature Summary

  • Fabricated using advanced aMOSTM high voltage process for robust switching performance.
  • Features low on-resistance and gate charge to facilitate rapid adoption in offline power supply designs.
  • Includes 100% UIS testing and guaranteed avalanche energy ratings for enhanced reliability.

Single FETs, MOSFETs Applications

  • Offline power supply designs
  • Switching applications requiring high robustness

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'L' against official Alpha & Omega Semiconductor documentation to confirm package and electrical specifications. Ensure compatibility with intended thermal management requirements. Confirm RoHS compliance status through manufacturer datasheets before procurement.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring 600V blocking capability with moderate current handling. Evaluate thermal resistance values relative to the cooling solution. Consider the avalanche energy rating if inductive load switching is present. Verify gate drive voltage compatibility with the specified threshold characteristics.

Single FETs, MOSFETs Part Context

This part belongs to the aMOSTM family from Alpha & Omega Semiconductor. It shares design characteristics with the AOT11S60L, AOB11S60L, and AOTF11S60 variants, differing primarily in packaging configurations such as TO-220F, DPAK, or D2PAK while maintaining similar electrical performance profiles.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include AOT11S60L, AOB11S60L, and AOTF11S60. Verify pinout compatibility and thermal resistance differences between packages before substitution.

Single FETs, MOSFETs FAQ

Is the AOTF11S60L tested for avalanche ruggedness?

Yes, the datasheet confirms that the device undergoes 100% UIS (Unclamped Inductive Switching) testing and provides guaranteed avalanche energy ratings.

What is the maximum repetitive avalanche energy for this component?

The maximum repetitive avalanche energy is specified as 60 mJ under defined test conditions.

AOTF11S60LAOTF11S60L
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