AOTF125A60FDL

$4.83

Description：LINEAR IC
Series：aMOS5™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:12d3a0621003 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

AOTF125A60FDL is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is LINEAR IC. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOTF125A60FDL

Description：LINEAR IC
Series：aMOS5™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：125mOhm @ 14A, 10V
Vgs(th) (Max) @ Id：4.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：48 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3060 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：52W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220F
Package / Case：TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for AOTF125A60FDL

AOTF125A60FDL

Single FETs, MOSFETs Overview

The AOTF125A60FDL is a 600V N-Channel Power Transistor utilizing proprietary αMOS5 technology. It features a maximum drain-source voltage of 600V and a continuous drain current of 7.9A at 25°C case temperature, increasing to 31A at 100°C. The device has a maximum on-resistance of 0.125Ω at VGS=10V and ID=14A. Key dynamic parameters include a typical total gate charge of 48nC and an effective output capacitance energy (Eoss) of 6.8mJ at 400V. It supports a pulsed drain current of 56A and operates within a junction temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

Proprietary αMOS5 technology for optimized switching performance
Enhanced body diode designed for robustness and fast reverse recovery
Optimized switching parameters to improve EMI performance
100% tested for Unclamped Inductive Switching (UIS) and Gate Resistance

Single FETs, MOSFETs Applications

LLC PWM stages in Server power supplies
PSFB PWM stages in Telecom rectifiers
TTF PWM stages in Industrial power systems
UPS applications
Solar Inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'FDL' against official Alpha & Omega Semiconductor documentation to confirm package type and tape/reel specifications. Ensure compatibility with TO-220F mounting requirements. Confirm RoHS 2.0 compliance status through the manufacturer's latest datasheet revision before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for high-efficiency hard-switched topologies requiring low RDS(ON) and robust avalanche capability. Consider the 0.125Ω maximum resistance and 48nC gate charge for balancing conduction losses against switching speed. Evaluate thermal management needs based on the 2.4°C/W junction-to-case resistance for heatsink design.

Single FETs, MOSFETs Part Context

This part belongs to the AOTF series of N-Channel MOSFETs from Alpha & Omega Semiconductor. It is part of the αMOS5 platform, which focuses on high-voltage superjunction technologies. The device is designed as a replacement or upgrade for legacy 600V MOSFETs in high-density power conversion applications.