Single FETs, MOSFETs AOTF12T60L product image

AOTF12T60L

  • Description:MOSFET N-CH 600V 12A TO220F
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube

SKU:3dc7521a5d8e Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

AOTF12T60L is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 600V 12A TO220F. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOTF12T60L

  • Description:MOSFET N-CH 600V 12A TO220F
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):600 V
  • Current - Continuous Drain (Id) @ 25°C:12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:520mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id:5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:50 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:1954 pF @ 100 V
  • FET Feature:-
  • Power Dissipation (Max):35W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220F
  • Package / Case:TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for AOTF12T60L

AOTF12T60L

Single FETs, MOSFETs Overview

The AOTF12T60L is a surface-mount N-channel MOSFET from Alpha & Omega Semiconductor, utilizing AlphaMOS-II trench technology. It features a drain-source voltage of 600V and a continuous drain current of 12A at 25°C case temperature. The device has a maximum on-resistance of 0.52Ω at VGS=10V and ID=6A. Key dynamic parameters include a typical gate charge of 33nC and an output capacitance energy of 4.5μJ at 400V. It operates within a junction temperature range of -55°C to 150°C and is housed in a TO-220F Green package.

Single FETs, MOSFETs Feature Summary

  • Utilizes latest Trench Power AlphaMOS-II technology for low on-resistance.
  • Features low input and reverse transfer capacitances for efficient switching.
  • High current capability with robust avalanche ruggedness.
  • Compliant with RoHS and Halogen Free standards.

Single FETs, MOSFETs Applications

  • General lighting for LED and CCFL
  • AC/DC power supplies for industrial applications
  • AC/DC power supplies for consumer electronics
  • AC/DC power supplies for telecom equipment

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'L' corresponds to the TO-220F Green tube packaging variant as documented. Confirm that the component meets the required environmental compliance standards for your assembly process. Ensure thermal management designs account for the specified junction-to-case thermal resistance values provided in the datasheet to maintain safe operating temperatures during operation.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage switching applications requiring moderate current handling in through-hole packages. Consider the 600V rating and 12A continuous current capability for primary side or secondary rectification tasks. Evaluate the gate charge and capacitance values against driver capabilities to optimize switching losses in power supply topologies.

Single FETs, MOSFETs Part Context

This part belongs to the AOTF series of N-channel MOSFETs manufactured by Alpha & Omega Semiconductor. It shares the same electrical specifications as the standard AOTF12T60 but is distinguished by its specific packaging configuration. The series leverages advanced trench technology to deliver performance suitable for general-purpose power conversion.

Single FETs, MOSFETs Replacement Considerations

Public confirmed substitute part numbers are not available in the source material.

Single FETs, MOSFETs FAQ

What is the maximum drain-source breakdown voltage?

The maximum drain-source breakdown voltage (BVDSS) is 600V.

Is the device tested for unclamped inductive switching?

Yes, the datasheet confirms that the device is 100% UIS tested.

What is the typical gate charge value?

The typical total gate charge (Qg) is 33nC.

AOTF12T60LAOTF12T60L

Click on the inquiry