AOTF15B60D

AOTF15B60D

$0.95
  • Description:IGBT 600V 30A TO-220F
  • Series:Alpha IGBT™

SKU:1ffe1ef40b37 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT 600V 30A TO-220F
  • Series:Alpha IGBT™
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):30 A
  • Current - Collector Pulsed (Icm):60 A
  • Vce(on) (Max) @ Vge, Ic:1.8V @ 15V, 15A
  • Power - Max:50 W
  • Switching Energy:420µJ (on), 110µJ (off)
  • Input Type:Standard
  • Gate Charge:25.4 nC
  • Td (on/off) @ 25°C:21ns/73ns
  • Test Condition:400V, 15A, 20Ohm, 15V
  • Reverse Recovery Time (trr):196 ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack
  • Supplier Device Package:TO-220F
  • Grade:-
  • Qualification:-

Download product information

AOTF15B60D

Overview

The AOTF15B60D is a 600V N-channel Power MOSFET from Alpha & Omega Semiconductor, part of the aMOS5 series. It features a TO-220F package with a maximum continuous drain current of 15A at Tj=100°C and a typical on-resistance (Rds(on)) of 380mΩ at Vgs=10V. The device offers a breakdown voltage of 600V, a gate threshold voltage of 4V, and a total gate charge of 75nC. With a power dissipation rating of 34W at case temperature, it supports operation between -55°C and 150°C junction temperature.

Feature Summary

  • High-voltage capability for robust switching performance
  • Low on-resistance for efficient conduction
  • Thermal stability across wide operating temperatures

Applications

  • Motor control systems
  • Power factor correction circuits
  • DC-DC converters

Procurement Notes

Verify component authenticity through official manufacturer channels or authorized distributors. Confirm datasheet revision and package marking alignment to ensure compliance with specified electrical parameters and thermal ratings before integration into production designs.

Selection Notes

Evaluate Rds(on) and gate charge requirements against switching frequency needs. Ensure adequate thermal management for the 34W dissipation limit. Verify that the 600V breakdown voltage exceeds peak circuit voltages with appropriate safety margins.

Part Context

This component belongs to the aMOS5™ series of high-performance N-channel MOSFETs designed for general-purpose switching applications. It shares family characteristics with other AOTF series devices but is distinguished by its specific 600V rating and 15A current capacity in the TO-220F package.

Replacement Considerations

Compatible substitutes include AOTF10B60D and AOTF20B60D from the same manufacturer, offering similar voltage ratings with adjusted current capabilities.

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